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Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment

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1.Enhancement of Carrier Ballistic Transport in Schottky S/D MOSFETs

机译：肖特基S / D MOSFET中载流子弹道传输的增强
- 作者：W. Wang;H. Tsuchiya;M. Ogawa
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
2.Defects, Junction Leakage and Electrical Performance of Ge pFET Devices

机译：Ge pFET器件的缺陷，结泄漏和电性能
- 作者：G. Eneman;E. Simoen;R. Yang;B. De Jaeger;G. Wang;J. Mitard;G. Hellings;D. P. Brunco;R. Loo;K. De Meyer;M. Caymax;C. Claeys;M. Meuris;M.M. Heyns
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
3.High-k Dielectrics and Metal Gates for Future Generation Memory Devices

机译：用于下一代存储设备的高k电介质和金属门
- 作者：J. A. Kittl;K. Opsomer;M. Popovici;N. Menou;B. Kaczer;et al
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
4.Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics

机译：温度对纳米晶嵌入高k非易失性存储特性的影响
- 作者：Chia-Han Yang;Yue Kuo;Chen-Han Lin;Way Kuo
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
5.Modeling the Influence of Defects on the Electrical Response of Multi-Dielectric Gate-Stack Structures

机译：建模缺陷对多介电栅堆叠结构电响应的影响
- 作者：H. P. Hjalmarson;R. A. B. Devine
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
6.Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale

机译：亚纳米级镍单硅化物/硅界面的三维原子探针层析成像研究
- 作者：Praneet Adusumilli;Conal E. Murray;Lincoln J. Lauhon;Ori Avayu;Yossi Rosenwaks;David N. Seidman
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
7.Electrical and Wafer Surface Profile Characterization of NiSi Formation Process using a Four Point Probe and Optical Surface Profilometer

机译：使用四点探针和光学表面轮廓仪对NiSi形成过程的电和晶片表面轮廓进行表征
- 作者：Woo Sik Yoo;Takeshi Ueda;Toshikazu Ishigaki;Kitaek Kang
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
8.Integration of Al Segregated NiSiGe/SiGe Source/Drain Contact Technology in p-FinFETs for Drive Current Enhancement

机译：将铝隔离的NiSiGe / SiGe源/漏接触技术集成到p-FinFET中以增强驱动电流
- 作者：Mantavya Sinha;Rinus T. P. Lee;S. Nandini Devi;Guo-Qiang Lo;Eng Fong Chor;Yee-Chia Yeo
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
9.Nanoelectromechanical Logic and Memory Devices

机译：纳米机电逻辑和存储设备
- 作者：Kerem Akarvardar;H.-S. Philip Wong
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
10.Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions

机译：使用升高的源极/漏极扩展来实现接近缩放极限的大体积CMOS的毫秒退火结
- 作者：Masami Hane
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
11.Flash Lamp Activation of n- and p-type Dopants in Strained and Unstrained SOI and HOI

机译：闪光灯在应变和非应变SOI和HOI中激活n型和p型掺杂剂
- 作者：R. A. Minamisawa;D. Buca;W. Heiermann;F. Lanzerath;S. Mantl;W. Skorupa;J. M. Hartmann;B. Ghyselen;N.Kemevez;U. Breuer
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
12.Atomic layer deposition of antimony oxide on hydrogen-terminated silicon substrates

机译：氧化锑在氢封端的硅基板上的原子层沉积
- 作者：Bodo Kalkofen;Serhiy Matichyn;Edmund P. Burte
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
13.Dopant and Carrier Concentration Profiling with Atomic Resolution by Scanning Tunneling Microscopy

机译：通过扫描隧道显微镜以原子分辨率分析掺杂物和载流子浓度
- 作者：Toshihiko Kanayama;Masayasu Nishizawa;Leonid Bolotov
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
14.The Evaluation of State-of-the-Art Front-End Structures by the Differential Hall Effect Continuous Anodic Oxidation Technique

机译：差分霍尔效应连续阳极氧化技术评估最先进的前端结构
- 作者：S. Prussin;J. Reyes
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
15.Photoluminescence Study on Ion Implanted Silicon after Rapid Thermal Annealing

机译：快速热退火后离子注入硅的光致发光研究
- 作者：Shuhei Takashima;Masahiro Yoshimoto;Woo Sik Yoo
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
16.Opportunities and Challenges for Germanium and Silicon-Germanium Channel p-FETs

机译：锗和硅锗通道p-FET的机遇与挑战
- 作者：S. W. Bedell;N. Daval;K. Fogel;K. Shimizu;J. Ott;J. Newbury;D. K. Sadana
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
17.Ge/GeO_2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics

机译：具有高压氧化作用的Ge / GeO_2界面控制，可改善电气特性
- 作者：Choong Hyun Lee;Toshiyuki Tabata;Tomonori Nishimura;Kosuke Nagashio;Koji Kita;Akira Toriumi
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
18.Revolutionary Nanoelectronic Devices and Processes for Post 32nm CMOS Era

机译：后32nm CMOS时代的革命性纳米电子器件和工艺
- 作者：Yoshio Nishi
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
19.Influence of interfacial oxygen and carbon on the misfit dislocation generation in SiGe epitaxial layers

机译：界面氧和碳对SiGe外延层错配位错产生的影响
- 作者：M.Fukuda;Y.Shimamune;K.Tanahashi;K.Ikeda;M.Nishikawa;H.Maekawa;N.Tamura;T.Mori;A.Shimizu;M.Kase
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
20.The Challenges in Introducing PMOS Dual Channel in CMOS Processing

机译：在CMOS处理中引入PMOS双通道的挑战
- 作者：H. R. Harris;Prashant Majhi;Paul Kirsch;Prasanna Sivasubramani;Jung Woo Oh;S.C. Song
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
21.The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

机译：外延生长工艺参数对Si钝化Ge pMOSFET中层特性和器件性能的影响
- 作者：Matty Caymax;Frederik Leys;Jerome Mitard;Koen Martens;Lijun Yang;Geoffrey Pourtois;Wilfried Vandervorst;Marc Meuris;Roger Loo
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
22.Light up the Future of Silicon Microprocessors

机译：点亮硅微处理器的未来
- 作者：Jifeng Liu;Mark Beals;Jurgen Michel;Lionel C. Kimerling
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
23.Fabrication of Suspended Ge-rich Nanowires by Ge Enrichment Technique for Multi-channel Devices

机译：锗富集技术用于多通道器件的悬浮富锗纳米线的制备
- 作者：E. Saracco;JF Damlencourt;D. Lafond;S. Bernasconi;V. Benevent;P. Rivallin;Y.Morand;J.M. Hartmann;P. Gautier;C. Vizioz;T. Ernst;C.Bonafos;P. Fazzini
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
24.Low voltage SILC Analysis for High-k/ Metal Gate Dielectrics

机译：高k /金属栅介质的低压SILC分析
- 作者：N. Rahim;D. Misra
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
25.Hafnium Oxide Etching Using Hydrogen Chloride Gas

机译：使用氯化氢气体蚀刻氧化f
- 作者：Hitoshi Habuka;Yoshitsugu Kobori;Masahiko Yamaji;Sadayoshi Horii;Yasuo Kunii
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
26.Boron Diffusion Behavior During the Formation of Shallow p~+ Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes

机译：锗预非晶化注入，预退火RTA和后退火非熔融准分子激光（NLA）工艺的结合，在浅p〜+ / n结形成过程中硼的扩散行为
- 作者：S.R. Aid;S. Matsumoto;T. Suzuki;G. Fuse;T. Nakazawa
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
27.Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing

机译：等离子体掺杂和准分子激光退火形成超浅结
- 作者：Lak-Myung Jung;Seung-Woo Do;Jae-Min Kim;Seong Ho Kong;Ki-Hong Nam;Young-Hyun Lee
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
28.High Temperature Ion Implantation: a Solution for n-Type Junctions in Strained Silicon

机译：高温离子注入：应变硅中n型结的解决方案
- 作者：W. Heiermann;D. Buca;H. Trinkaus;B. Hollaender;U. Breuer;N. Kernevez;B. Ghyselen;S. Mantl
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
29.Characterization of Annealing Effects in Ultra-Shallow Boron-Implanted Si Wafers using Raman Scattering

机译：利用拉曼散射表征超浅注入硼硅晶片的退火效应
- 作者：Masashi Fukumoto;Hiroaki Minami;Noriyuki Hasuike;Hiroshi Harima;Masahiro Yoshimoto;Woo Sik Yoo
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
30.RF Sputtered Er_2O_3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

机译：RF溅射Er_2O_3薄膜作为锗MOS器件的高k栅极电介质
- 作者：Deepak G.C.;Navakanta Bhat
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
31.The Effect of NH_3 on the interface of HfO_2 and A1_2O_3 films on GaAs (100) surfaces

机译：NH_3对GaAs（100）表面HfO_2和A1_2O_3薄膜界面的影响
- 作者：Dong Chan Suh;Young Dae Cho;Dae-Hong Ko;Kwun Bum Chung;Mann-Ho Cho;Yongshik Lee
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
32.On the Origin of anomalous V_(TH) shift in high-k MOSFETs

机译：关于高k MOSFET中异常V_（TH）偏移的起因
- 作者：Akira Toriumi;Koji Kita
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
33.Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition

机译：工程带边缘高κ/金属栅极n-MOSFET，其盖层通过原子层沉积包含IIA和IIIB组元素
- 作者：H. Jagannathan;L. F. Edge;P. Jamison;R. Iijima;V. Narayanan;V. K. Paruchuri;R. D. Clark;S. Consiglio;C. S. Wajda;G. J. Leusink
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
34.Electrical and Materials Characterization of Reactive and Co-Sputtered Tantalum Carbide Metal Electrodes for High-K Gate Applications

机译：用于高K栅极应用的反应性和共溅射碳化钽金属电极的电气和材料表征
- 作者：L. F. Edge;T. Vo;A. J. Kellock;B. P. Linder;J. Bruley;Y. Zhu;P. DeHaven;V. K.Paruchuri;T. Tsunoda;A. Venkateshan;S. R. Shinde
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
35.Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning

机译：偶极子模型解释高k /金属栅极阈值电压调整
- 作者：P.D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young;C. S. Park;K. Freeman;M. M. Hussain;G. Bersuker;H. R. Harris;P. Majhi;P. Lysaght;H.-H. Tseng;B. H. Lee;R. Jammy
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
36.Properties of ErSi_(2-y) contacts formed on Si_(1-x)C_x Epitaxial Layers

机译：Si_（1-x）C_x外延层上形成的ErSi_（2-y）触点的特性
- 作者：E. Alptekin;M. C. Ozturk;V. Misra;Y. Cho;Y. Kim;S. Chopra
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年
37.UHV Fabrication of the Ytterbium Silicide as Potential Low Schottky Barrier S/D Contact Material for N-Type MOSFET

机译：UHV硅化Y作为N型MOSFET的潜在低肖特基势垒S / D接触材料
- 作者：D.A. Yarekha;G. Larrieu;N. Breil;E. Dubois;S. Godey;X. Wallart;C. Soyer;D. Remiens;N. Reckinger;X. Tang;A. Laszcz;J. Ratajczak;A. Halimaoui
- 会议名称：《Advanced gate stack, source/drain , and channel engineering for si-based CMOS 5: New materials, processes, and equipment》 | 2009年