Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

Yan Shi; Zhao J.H.

首页> 外文期刊>IEEE Transactions on Electron Devices >Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

【24h】

Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

机译：基于应变补偿GaInAsSb / AlAsSb分子束外延生长的多量子阱的可调谐光电探测器

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

GaInAsSb/AlGaAsSb strain compensated multiple quantum well (MQW) p-i-n structures grown by molecular beam epitaxy on GaSb substrates have been successfully fabricated into tunable photodiodes, which showed a large photoresponse peak shift up to 30 meV (80 nm) at 77 K under a reverse bias of 10 V due to quantum confined Stark effect (QCSE). The QCSE persists up to room temperature and the values of the excitonic absorption peak shifts agree well with the calculated results. Based on the observed QCSE, an electrically tunable resonant cavity enhanced photodetector with strain compensated MQW structure is proposed and modeled.

机译：通过分子束外延在GaSb衬底上生长的GaInAsSb / AlGaAsSb应变补偿多量子阱（MQW）引脚结构已成功制造为可调光电二极管，该光电二极管在77 K下显示出高达30 meV（80 nm）的大光响应峰位移，反向时由于量子限制的斯塔克效应（QCSE）而产生的10 V偏置电压。 QCSE持续到室温，并且激子吸收峰位移的值与计算结果非常吻合。基于观测到的QCSE，提出并建模了具有应变补偿MQW结构的电可调谐振腔增强光电探测器。

著录项

来源
《IEEE Transactions on Electron Devices》 |1997年第12期|P.2167-2173|共7页
作者
Yan Shi; Zhao J.H.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy [J] . Yan Shi, Zhao J.H. Electronics Letters . 1997,第17期

机译：通过分子束外延生长具有GaInAsSb / AlGaAsSb多量子阱结构的可调谐谐振腔增强光电探测器
2. Large tunable bandgaps in the In As/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy [J] . Jinshan Yao, Rui Pan, Wenyang Wang, Applied Physics Letters . 2021,第25期

机译：通过分子束外延生长的AS / ALAS应变补偿短周期超晶格的大型可调谐带隙
3. Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy [J] . C.Lin, Y.L.Zheng, A.Z.Li Journal of Crystal Growth . 2001,第期

机译：固体源分子束外延生长的中红外GaInAsSb光电探测器
4. Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy [C] . Sugou, S., Naniwae, Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on . 1994

机译：气源分子束外延生长InP上InGaAs / InAlP高压缩应变多量子阱结构中界面应变和平均应变的应变补偿
5. Characteristics of an Indium Asenide-based nBn photodetectors grown by molecular beam epitaxy. [D] . Pedrazzani, Janet Renee. 2010

机译：通过分子束外延生长的基于砷化铟的nBn光电探测器的特性。
6. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy [O] . Kwang Wook Park, Chang Young Park, Sooraj Ravindran, 2014

机译：通过分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性
7. Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy [O] . Zhang, X. Q., Ganapathy, Sasikala, Kumano, H, 2002

机译：金属有机分子束外延生长在GaNAs应变补偿层中的InAs量子点的光致发光研究

Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅