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首页> 外文期刊>Energy & environmental science >Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer depositiont
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Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer depositiont

机译：通过原子层沉积法生长的硫化铜薄膜的结构，光学和电子稳定性

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摘要

Copper sulfide films of nanometer thickness are grown by atomic layer deposition (ALD) and their structural and optoelectronic properties investigated as a function of time and storage environment. At temperatures as low as 80 °C polycrystalline thin films are synthesized, which index to the stoichiometric (Cu_2S) chalcocite phase. As-prepared and prior to exposure to room ambient, conductive films are obtained as a result of a high mobility (4 cm~2 V~(-1) s~(-1)) and a relatively moderate p-type doping of 1018 cm"3. However, exposure to air results in a rapid rise in conductivity due to heavy p-type doping (>10~(20) cm~(-3)). The evolving electronic properties in air are correlated with a change in both crystalline phase and optical constants. Surface analysis corroborates a copper deficiency induced by room temperature oxidation in air. Surprisingly, storage in a <0.1 ppm oxygen and water atmosphere significantly slows but does not halt the rise in conductivity with time. However, an Al_2O_3 overlayer-also grown by ALD-results in significantly lower carrier concentrations as well as dramatically slower carrier addition with time, even under ambient conditions. The implications for future use of Cu_2S in more efficient (p+) and stable thin film photovoltaics are discussed.
机译：通过原子层沉积（ALD）生长纳米厚度的硫化铜膜，并研究其结构和光电性能随时间和存储环境的变化。在低至80°C的温度下，合成了多晶薄膜，该薄膜指向化学计量（Cu_2S）辉绿岩相。如所准备的，并且在暴露于室温之前，由于高迁移率（4 cm〜2 V〜（-1）s〜（-1））和相对中等的p型掺杂1018而获得了导电膜cm.3。但是，暴露于空气中会由于重p型掺杂（> 10〜（20）cm〜（-3））而导致电导率快速上升。空气中不断发展的电子特性与电子密度的变化相关。表面分析证实了空气中室温氧化引起的铜缺乏，令人惊讶的是，在<0.1 ppm的氧气和水气氛中储存会显着减慢但不会阻止电导率随时间的上升，但是Al_2O_3即使是在环境条件下，也可以通过ALD来生长覆层，从而显着降低载流子浓度，并显着降低载流子随时间的流逝，讨论了将来在更高效（p / n +）和稳定的薄膜光伏电池中使用Cu_2S的意义。 。

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  • 来源
    《Energy & environmental science》 |2013年第6期|1868-1878|共11页
  • 作者

    Alex B. F. Martinson; Shannon C. Riha; Elijah Thimsen; Jeffrey W. Elam; Michael J. Pellin;

  • 作者单位

    Argonne National Laboratory, 9700 S. Cass Ave., Lemont, It 60439, USA;

    Argonne National Laboratory, 9700 S. Cass Ave., Lemont, It 60439, USA;

    Argonne National Laboratory, 9700 S. Cass Ave., Lemont, It 60439, USA;

    Argonne National Laboratory, 9700 S. Cass Ave., Lemont, It 60439, USA;

    Argonne National Laboratory, 9700 S. Cass Ave., Lemont, It 60439, USA;

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