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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt--crystal interface

机译:Czochralski硅生长的整体模型可预测熔体-晶体界面处的氧含量和热波动

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摘要

A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt convection is presented. Global heat and mass transport is calculated using an axisymmetrical quasi-steady-state approximation with accounting for radiative heat exchange, heat conduction in solid parts, inert gas flow, and turbulent melt convection. The global transport calculations provide adequate boundary conditions for comprehensive investigation of melt turbulent convection using 3D LES. The LES of the melt flow describes the temperature distribution and impurity transport in the melt much better than 2D turbulent flow models. Moreover, the 3D calculations provide complete information with respect to thermal fluctuations in the melt and to non-uniformity of the crystallization process at the melt--crystal interface.
机译:提出了一种计算模型,该模型结合了整个CZ系统中的整体传热和传质计算以及湍流对流的大涡模拟(LES)。使用轴对称准稳态近似计算总热量和质量传递,其中考虑了辐射热交换,固体部分的热传导,惰性气体流动和湍流熔体对流。全球输运计算为使用3D LES综合研究熔体湍流对流提供了适当的边界条件。熔体流的LES描述了熔体中的温度分布和杂质传输,其效果远远好于二维湍流模型。此外,3D计算可提供有关熔体中热波动以及熔体-晶体界面处结晶过程的不均匀性的完整信息。

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