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首页> 外文期刊>Journal of Crystal Growth >Anisotropic study of thermal stresses induced by diameter fluctuation during Czochralski silicon single crystal growth
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Anisotropic study of thermal stresses induced by diameter fluctuation during Czochralski silicon single crystal growth

机译：直拉硅单晶生长过程中由直径波动引起的热应力的各向异性研究

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摘要

Instabilities in the Czochralski crystal growth process result in deviation from the desired crystal diameter i.e. uneven crystal surface. The excessive thermoelastic stress induced by diameter perturbation is studied by mean of numerical simulations. A set of 3D simulation has been performed for an axisymmetric crystal. The crystal anisotropy is taken into account. The influence of crystal diameter fluctuation on stress field inside the crystal has been studied. The resolved shear stresses have been calculated for 12 slip systems for three crystal orientations. Accumulated excess stress from its critical value is calculated. Simulation results suggest that crystal surface undulation affects both thermal field and stress distribution inside the crystal. The crystal region with high risk of dislocation generation is discussed for three crystal orientation. The stress level in crystal orientation is found to be lower than other orientations.
机译：直拉晶体生长过程中的不稳定性导致偏离所需的晶体直径，即晶体表面不平坦。通过数值模拟研究了由直径扰动引起的过大的热弹性应力。已对轴对称晶体执行了一组3D仿真。考虑到晶体各向异性。研究了晶体直径波动对晶体内部应力场的影响。已为12个滑移系统计算了三个晶体取向的解析切应力。从其临界值计算出累积的过大应力。仿真结果表明，晶体表面起伏会影响晶体内部的热场和应力分布。对于三个晶体取向，讨论了具有高位错产生风险的晶体区域。发现晶体取向上的应力水平低于其他取向。

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