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首页> 外文期刊>IEE Proceedings. Part J >Room temperature InAs/InAs/sub 1-x/Sb/sub x/ single quantum well light emitting diodes with barriers for improved carrier confinement
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Room temperature InAs/InAs/sub 1-x/Sb/sub x/ single quantum well light emitting diodes with barriers for improved carrier confinement

机译：室温InAs / InAs / sub 1-x / Sb / sub x /具有阻挡层的单量子阱发光二极管，用于改善载流子限制

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摘要

Room temperature InAs/InAs/sub 1-x/Sb/sub x/ single quantum well light emitting diodes for the mid-infrared region that emit at /spl lambda//spl sim/4.2 /spl mu/m with an internal efficiency of 2.6% and pulsed output powers of more than 110 /spl mu/W/A are studied. The structures are grown by molecular beam epitaxy and include an InAl/sub 0.17/As/sub 0.83/ barrier for enhanced electron confinement in the active region. Comparison with an identical structure grown without the barrier demonstrates an improvement in room temperature efficiency by a factor of more than six. Additional magneto-electroluminescence measurements reveal several very narrow subband transitions with a typical FWHM of only 10 meV. The broad (/spl sim/40 meV) LED emission spectra are therefore due to multiple bound states in the quantum wells. This shows the high material quality of the quantum wells, and that the quasi-Fermi energy separation, even at low (150 A/cm/sup 2/) current densities, exceeds /spl sim/30 meV and promises excellent prospects for high gain in laser diode structures made from these heterostructures.
机译：室温InAs / InAs / sub 1-x / Sb / sub x /用于中红外区的单量子阱发光二极管，内部发射效率为/ spl lambda // spl sim / 4.2 / spl mu / m。研究了2.6％和超过110 / spl mu / W / A的脉冲输出功率。该结构通过分子束外延生长，并包括InAl / sub 0.17 / As / sub 0.83 /势垒，用于增强电子在有源区的约束。与生长没有障碍的相同结构的比较表明，室温效率提高了六倍以上。附加的磁电致发光测量结果揭示了几个非常窄的子带跃迁，典型的FWHM仅10 meV。因此，宽的（/ spl sim / 40 meV）LED发射光谱是由于量子阱中的多个束缚态所致。这表明了量子阱的高材料质量，并且即使在低电流密度（150 A / cm / sup 2 /）时，准费米能量分离也超过了/ spl sim / 30 meV，并有望获得高增益的良好前景由这些异质结构制成的激光二极管结构中。

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