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首页> 外文期刊>IEE Proceedings. Part J >Growth and characterisation of mid-IR InAs/sub 0.9/Sb/sub 0.1/-InAs strained multiple quantum well light emitting diodes grown on InAs substrates
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Growth and characterisation of mid-IR InAs/sub 0.9/Sb/sub 0.1/-InAs strained multiple quantum well light emitting diodes grown on InAs substrates

机译：在InAs衬底上生长的中红外InAs / sub 0.9 / Sb / sub 0.1 / -InAs应变多量子阱发光二极管的生长和表征

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摘要

Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs/sub 0.9/Sb/sub 0.1/ light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 /spl mu/m and can be used to fabricate low cost sensors for the detection or monitoring of any C-H containing compound. The compositional dependence of InAsSb on the As/sub 2/ over Sb/sub 4/ flux ratio has been examined and could be fitted using an empirical expression based on the As/sub 2/ and Sb/sub 4/ fluxes and on their relative sticking coefficients. Electroluminescence has been measured at room temperature and at liquid nitrogen temperature. The low temperature spectra peak at 3.4 /spl mu/m (InAs) and at 3.8 /spl mu/m (InAs/sub 0.9/Sb/sub 0.1/). At room temperature only InAs emission is observed. The external efficiencies at room temperature were 1.0/spl times/10/sup -4/, and the maximum output power was 27.5 /spl mu/W under pulsed operation at 740 mA (30 kHz, 0.6% duty cycle).
机译：分子束外延（MBE）已用于在InAs基板上生长晶格匹配的应变多量子阱InAs / sub 0.9 / Sb / sub 0.1 /发光二极管（LED）。这些LED的室温红外辐射为3.4 / spl mu / m，可用于制造低成本传感器，用于检测或监测任何含C-H的化合物。已经检查了InAsSb对As / sub 2 /相对于Sb / sub 4 /通量比的成分依赖性，可以使用基于As / sub 2 /和Sb / sub 4 /通量及其相对值的经验表达式进行拟合黏着系数。已经在室温和液氮温度下测量了电致发光。低温光谱的峰值分别为3.4 / spl mu / m（InAs）和3.8 / spl mu / m（InAs / sub 0.9 / Sb / sub 0.1 /）。在室温下，仅观察到InAs发射。室温下的外部效率为1.0 / spl乘以/ 10 / sup -4 /，在740 mA（30 kHz，0.6％占空比）的脉冲操作下，最大输出功率为27.5 / spl mu / W。

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