Gain calculations for unipolar semiconductor lasers

Cheung C.Y.L.; Rees P.

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Gain calculations for unipolar semiconductor lasers

机译：单极半导体激光器的增益计算

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The optical gain spectra of a single triple quantum well (TQW) mid-infrared (MIR) laser element suitable for incorporation in a quantum cascade configuration are investigated. The kinetics of the carrier transport in the TQW structure are provided using a four-level rate equation model. The low gain per element at MIR frequencies illustrates the need for several such elements. Preliminary gain calculations for a near-infrared (NIR) structure are also performed.

机译：研究了适合掺入量子级联配置的单个三重量子阱（TQW）中红外（MIR）激光元件的光学增益谱。使用四级速率方程模型提供了TQW结构中载流子传输的动力学。 MIR频率下每个元素的低增益说明需要几个这样的元素。还执行了近红外（NIR）结构的初步增益计算。

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《IEE Proceedings. Part J》 |1999年第1期|P.9-13|共5页
作者
Cheung C.Y.L.; Rees P.;
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正文语种 eng
中图分类光电子技术、激光技术;电工技术;
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2. Self-consistent optical gain and threshold current calculations for near infrared intersubband semiconductor lasers [J] . Cheung CYL., Shore KA., Pierce I., Journal of Modern Optics . 2000,第11期

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3. High reflectivity metallic mirror coatings for mid-infrared ( λ ≈9 μm) unipolar semiconductor lasers [J] . H Page, P Collot, A de Rossi, Semiconductor science and technology . 2002,第12期

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4. Optical gain claculations for 1.55 #mu# m unipolar intersubband semiconductor lasers [C] . C.Y.L.Cheung, I.Pierce, P.Ress, Topical meeting on advanced semiconductor lasers and their applications . 2000

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Gain calculations for unipolar semiconductor lasers

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