...
机译:垂直电极GaN LED的热行为和红外特性
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, P. R. China Department of Physics & Electronic Information Engineering Zhangzhou Normal University, Zhangzhou,Fujian, P. R. China;
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, P. R. China;
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian 361005, P.R. China;
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, P. R. China;
Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, P. R. China;
T_r: radiation temperature, ℃; T_j: junction temperature, ℃; T_u: ambient temperature, ℃;
机译:用红外光谱(AFM-IR)技术耦合的原子力显微镜(AFM-IR)技术,纳米级红外,老化微塑料的热和力学性能
机译:P - GaN的电子表面,光学和电性能通过原位MOCVD激活和Ingan / GaN LED中的原位热退火
机译:不同GaN盖层厚度的InGaN / GaN多量子阱绿色LED的性能和效率下降行为研究
机译:热退火的肖特基金属接触对N-GaN肖特基二极管DC和RF行为的影响
机译:同步红外成像方法可表征材料的热性能。
机译:将热分析与差示扫描量热法,四极质谱法和红外光谱法(TG-DSC-QMS-FTIR)结合使用,以监测黄腐酸和腐殖酸的化学性质和热稳定性
机译:近红外,中红外和太赫兹光谱范围内的半绝缘,n型和p型氨热GaN基板的透明度