Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

Sara Pellegrini; Ryan E. Warburton; Lionel J. J. Tan; Jo Shien Ng; Andrey B. Krysa; Kristian Groom; John P. R. David; Sergio Cova; Michael J. Robertson; Gerald S. Buller

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Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

机译：InGaAs-InP单光子雪崩二极管检测器的设计和性能

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摘要

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

机译：本文介绍了专为1550 nm波长的单光子检测而开发的平面几何InGaAs-InP器件的设计，制造和性能。描述了诸如暗计数率，单光子检测效率，后脉冲和抖动之类的一般性能问题。

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来源
《IEEE Journal of Quantum Electronics》 |2006年第4期|p.397-403|共7页
作者
Sara Pellegrini; Ryan E. Warburton; Lionel J. J. Tan; Jo Shien Ng; Andrey B. Krysa; Kristian Groom; John P. R. David; Sergio Cova; Michael J. Robertson; Gerald S. Buller;
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作者单位

School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K.;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类计量学;
关键词
Avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes;

机译：雪崩击穿;雪崩光电二极管（APD）;光电探测器;光电二极管;

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1. Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm [J] . Warburton R.E., Intermite G., Myronov M., IEEE Transactions on Electron Devices . 2013,第11期

机译：Ge-on-Si单光子雪崩二极管检测器：1310和1550 nm波长的设计，建模，制造和表征
2. High performance planar germanium-on-silicon single-photon avalanche diode detectors [J] . Peter Vines, Kateryna Kuzmenko, Jaros?aw Kirdoda, Nature Communications . 2019,第1期

机译：高性能平面硅上锗单光子雪崩二极管探测器
3. Saturated detection efficiency of single-photon detector based on an InGaAs/InP single-photon avalanche diode gated with a large-amplitude sinusoidal voltage [J] . Tada Akiko, Namekata Naoto, Inoue Shuichiro Japanese journal of applied physics . 2020,第7期

机译：基于具有大幅度正弦电压的InGaAs / InP单光子雪崩二极管的单光子检测器的饱和检测效率
4. Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths [C] . Intermite G., Warburton R.E., Myronov M., International Conference on Group IV Photonics . 2013

机译：台面几何Ge-on-Si单光子雪崩二极管探测器原型在1310 nm和1550 nm波长处的设计和性能
5. CMOS single-photon avalanche diodes and micromachined optical filters for integrated fluorescence sensing. [D] . Dandin, Marc Peralte. 2012

机译：CMOS单光子雪崩二极管和微机械滤光片，用于集成荧光传感。
6. High performance planar germanium-on-silicon single-photon avalanche diode detectors [O] . Peter Vines, Kateryna Kuzmenko, Jarosław Kirdoda, -1

机译：高性能平面硅上锗单光子雪崩二极管探测器
7. Design and performance of an InGaAs-InP single-photon avalanche diode detector [O] . Pellegrini, Sara, Warburton, Ryan E., Tan, L. J J, 2006

机译：InGaAs-InP单光子雪崩二极管检测器的设计和性能

Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

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