Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

Taylor G.W.; Evaldsson P.A.

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Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

机译：多功能阵列应用的集成反相通道光电器件和电路元件

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An approach to laser-based optoelectronic integration is described. It is shown that by using a single epitaxial growth structure and a common processing sequence, all the electrical and optical devices required for a complete optoelectronic integrated circuit (OEIC) are realized. The demonstrated individual device performance and the implementation of an integrated combination of devices are discussed. Such applications as the implementation of a basic building block for a 2*2 smart-pixel switching node are discussed. A comparison to other laser- and modulator-based approaches is presented.

机译：描述了基于激光的光电集成的方法。结果表明，通过使用单个外延生长结构和通用的处理顺序，就可以实现完整的光电集成电路（OEIC）所需的所有电气和光学器件。讨论了演示的单个设备性能以及设备集成组合的实现。讨论了诸如用于2 * 2智能像素切换节点的基本构件的实现之类的应用。提出了与其他基于激光和调制器的方法的比较。

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来源
《IEEE Journal of Quantum Electronics》 |1993年第2期|P.785-800|共16页
作者
Taylor G.W.; Evaldsson P.A.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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专利

1. A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits [J] . Sargood S.K., Taylor G.W. IEEE Journal of Quantum Electronics . 1993,第1期

机译：量子阱倒置沟道异质结构作为光电集成电路的多功能组件
2. Applications of PSPICE simulation software to the study of optoelectronic integrated circuits and devices [J] . Desai N.R., Hoang K.V. IEEE Transactions on Education . 1993,第4期

机译：PSPICE仿真软件在光电集成电路和器件研究中的应用
3. Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/Ⅲ-Ⅴ-N Alloy Layers [J] . Yuzo FURUKAWA, Hiroo YONEZU, Yuji MORISAKI, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第33a36期

机译：晶格匹配的Si /Ⅲ-Ⅴ-N合金层中光电集成电路元件的单片实现
4. Elemental devices for monolithic optoelectronic integrated circuits on lattice-matched Si/III-V-N/Si structure [C] . Y. Furukawa, H. Yonezu, A. Wakahara, Device Research Conference . 2006

机译：晶格匹配Si / III-V-N / Si结构单片光电集成电路的元素装置
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications [O] . Siqi Tang, Jiang Yan, Jing Zhang, 2020

机译：用于单片三维集成电路应用的低成本和低温多晶硅纳米线传感器阵列的制造
7. Multifunctional Optoelectronic Devices: Multifunctional Optoelectronic Device Based on an Asymmetric Active Layer Structure (Adv. Funct. Mater. 17/2019) [O] . Beitao Ren, Gancheong Yuen, Sunbin Deng, 2019

机译：多功能光电器件：基于非对称有源层结构的多功能光电器件（ADV。Funct。Mater。17/2019）
8. Selective Processing Techniques for Electronic and Optoelectronic Applications: Quantum-Well Devices and Integrated Optic Circuits [R] . Osgood, R. M. 1999

机译：电子和光电应用的选择性处理技术：量子阱器件和集成光学电路

Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

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