High-power GaN MESFET on sapphire substrate

Gaquiere C.; Trassaert S.

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High-power GaN MESFET on sapphire substrate

机译：蓝宝石衬底上的高功率GaN MESFET

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The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power added efficiency of 27% at V/sub ds/=30 V and V/sub gs/=-2 V. These results represent a significant improvement over similar MESFET's or HFET's grown on GaAs or InP substrates.

机译：给出了在2 GHz下获得的GaN MESFET的首个功率结果。在V / sub ds / = 30 V和V / sub gs / =-2 V时，获得了2.2 W / mm的功率密度和27％的相关功率附加效率。这些结果表明，与类似的MESFET或HFET在GaAs或InP衬底上生长。

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《IEEE Microwave and Guided Wave Letters》 |2000年第1期|P.19-20|共2页
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Gaquiere C.; Trassaert S.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Sidegating effect of GaN MESFETs grown on sapphire substrate [J] . Egawa T., Ishikawa H. Electronics Letters . 1998,第6期

机译：在蓝宝石衬底上生长的GaN MESFET的侧蚀效应
2. On the design of GaN vertical MESFETs on commercial LED sapphire wafers [J] . Atalla Mahmoud R. M., Elahi Asim M. Noor, Mo Chen, Solid-State Electronics . 2016,第deca期

机译：关于商用LED蓝宝石晶片上的GaN垂直MESFET的设计
3. Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes: Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes [J] . Natsuko Aota, Hideo Aida, Yutaka Kimura, Sensors and materials . 2014,第6期

机译：高性能基于GaN的发光二极管的蓝宝石衬底处理：蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
4. High-power Blue-Violet Lasers Grown On 3-inch Sapphire and GaN Substrate [C] . Shiro Uchida, Shinroh Ikeda, Takashi Mizuno, International Symposium on Compound Semiconductors . 2003

机译：在3英寸蓝宝石和GaN衬底上种植的高功率蓝紫色激光器
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal [O] . Sepideh Faraji, Elke Meissner, Roland Weingärtner, 2020

机译：Movpe反应器中蓝宝石衬底上GaN牺牲层的原位制备用于过度分离GaN晶体
8. Effect of Carrier Injection into MESFET Substrates: Comparison of MESFET on a Semi-Insulating Buffer, MESFET on a P Substrate, and Substrate-Less MESFET [R] . El-Ghazaly, S., Itoh, T. 1988

机译：载流子注入到mEsFET衬底中的影响：mEsFET在半绝缘缓冲器，p衬底上的mEsFET和无衬底mEsFET上的比较

High-power GaN MESFET on sapphire substrate

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