InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

Melique X.; Carbonell J.

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InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

机译：用于谐波倍增的InGaAs / InAlAs / AlAs异质结构势垒变容二极管

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In this work, we report on the radio frequency (RF) characterization up to 110 GHz of probable high-performance heterostructure barrier varactors fabricated from InP-based strained epilayers. By making use of a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-bias capacitance of 1 fF//spl mu/m/sup 2/ without deviation in the frequency band investigated. Good agreement between calculated and measured scattering parameters is found on the basis of electromagnetic simulation of diode embedding.

机译：在这项工作中，我们报告了由基于InP的应变外延层制造的可能的高性能异质结构势垒变容二极管的高达110 GHz的射频（RF）特性。通过使用双阶梯状势垒方案，电压处理高达12 V，而对于1 fF // spl mu / m / sup 2的零偏置电容，在85 GHz时的电容比达到5：1。 /在调查的频带中没有偏差。根据二极管嵌入的电磁仿真，发现计算出的散射参数和测量的散射参数之间具有良好的一致性。

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《IEEE Microwave and Guided Wave Letters》 |1998年第7期|P.254-256|共3页
作者
Melique X.; Carbonell J.;
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中图分类无线电电子学、电信技术;
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3. High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors [J] . Duez V., Melique X. Electronics Letters . 1998,第19期

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InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

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