High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

Duez V.; Melique X.

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High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

机译：GaAs / InGaAs / AlAs异质结构量子阱势垒变容二极管的高电容比

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The authors report a very high capacitance ratio of /spl sim/10:1:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.

机译：作者报告说，异质变容二极管的电容比非常高，为/ spl sim / 10：1：1。为了实现这一点，在GaAs技术中制造了一种新的InGaAs / AlAs量子阱势垒方案。与常规的耗尽操作模式相反，电容调制涉及通过量子阱本征态的载流子动力学。

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《Electronics Letters》 |1998年第19期|P.1860-1861|共2页
作者
Duez V.; Melique X.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate [J] . Tavakoli Dastjerdi M. H.Sanz-Velasco A.Vukusic J.Kollberg E. L.Sadeghi M.Stake J. Electron Device Letters, IEEE . 2011,第2期

机译：硅衬底上的InGaAs / InAlAs / AlAs异质结构势垒变容二极管
2. Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes [J] . T. A. Emadi, T. Bryllert, M. Sadeghi, Applied Physics Letters . 2007,第1期

机译：InGaAs / InAlAs / AlAs异质结构势垒变容二极管的最佳势垒厚度研究
3. InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication [J] . Melique X., Carbonell J. IEEE Microwave and Guided Wave Letters . 1998,第7期

机译：用于谐波倍增的InGaAs / InAlAs / AlAs异质结构势垒变容二极管
4. Quantum Simulation of a Double Gate Double Heterostructure in AlAs/InGaAs HEMT to Analyze Temperature Effects [C] . Neha Verma, Parveen, Jyotika Jogi UKSim-AMSS International Conference on Computer Modelling and Simulation . 2015

机译：AlAs / InGaAs HEMT中双栅极双异质结构的量子模拟以分析温度效应
5. Coherent Spectroscopy of InGaAs Quantum Dots =Koh?rente Spektroskopie an InGaAs Quantenpunkten [D] . Strau?, Stefan Maximilian. 2018

机译：Igaas量子点的相干壮观= koh？怨恨不同的区别和Ingaas Pollarts
6. Enhancement of Single-Photon Emission Rate from InGaAs/GaAs Quantum-Dot/Nanowire Heterostructure by Wire-Groove Nanocavity [O] . Wei Wei, Xin Yan, Jie Liu, 2019

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7. InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate [O] . Tavakoli Dastjerdi, M. Hadi, Sanz-Velasco, Anke, Vukusic, Josip, 2011

机译：硅衬底上的InGaAs / InAlAs / AlAs异质结构势垒变容二极管
8. Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors [R] . Ries, M. J., Richard, T. A., Maranowski, S. A., 1994

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High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

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