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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >Equivalent circuits for MIS microstrip discontinuities
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Equivalent circuits for MIS microstrip discontinuities

机译：MIS微带间断的等效电路

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摘要

Metal-insulator-semiconductor (MIS) microstrip open-end and microstrip gap discontinuities are characterized by means of equivalent circuits consisting of capacitors and resistors. The circuit parameters of these components are obtained in terms of the complex excess charge densities existing on the conducting strips of the discontinuities. These complex excess charge densities are computed by applying Galerkin's method in the spectral domain. The numerical results obtained for the equivalent circuit parameters of the discontinuities exhibit important variations with frequency, which become specially pronounced in the transition region between the slow-wave mode and the dielectric mode of the MIS microstrip lines involved in the discontinuities.
机译：金属绝缘体半导体（MIS）微带开路端和微带间隙不连续性的特征在于，其等效电路由电容器和电阻器组成。这些组件的电路参数根据不连续的导电带上存在的复数过剩电荷密度获得。这些复杂的多余电荷密度是通过在光谱域中应用Galerkin方法计算的。从间断的等效电路参数获得的数值结果显示出随频率的重要变化，这在间断所涉及的MIS微带线的慢波模式和介电模式之间的过渡区域中特别明显。

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