Microwave reflection measurements on doped semiconductors with picosecond transient radiation

Robertson W.M.; Arjavalingam G.

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Microwave reflection measurements on doped semiconductors with picosecond transient radiation

机译：皮秒瞬态辐射对掺杂半导体的微波反射测量

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Broadband microwave reflection spectroscopy using the COMITS (coherent microwave transient spectroscopy) method is described. COMITS is particularly suited to reflection studies because the picosecond transient radiation emitted from planar antennas is strongly linearly polarized. The validity of the technique is verified by reflection measurements on isotropic and anisotropic dielectrics. Reflection studies on a series of doped silicon samples demonstrate that the carrier dynamics in the 15-140-GHz frequency range are well described by a simple Drude model.

机译：描述了使用COMITS（相干微波瞬态光谱法）方法的宽带微波反射光谱法。 COMITS特别适合反射研究，因为从平面天线发出的皮秒瞬态辐射被强烈地线性极化。通过在各向同性和各向异性电介质上进行反射测量，可以验证该技术的有效性。对一系列掺杂硅样品的反射研究表明，通过简单的Drude模型可以很好地描述15-140 GHz频率范围内的载波动态。

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《IEEE Microwave and Guided Wave Letters》 |1991年第12期|P.371-373|共3页
作者
Robertson W.M.; Arjavalingam G.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Microwave reflection measurements on doped semiconductors with picosecond transient radiation

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