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首页> 外文期刊>IEEE Transactions on Circuits and Systems. 1 >Application of the back gate in MOS weak inversion translinear circuits
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Application of the back gate in MOS weak inversion translinear circuits

机译:背栅在MOS弱反相超线性电路中的应用

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摘要

Though the MOS transistor is a four-terminal device, it is most often used as a three-terminal device. Therefore, a large number of possible MOS circuits are overlooked. In this brief, the four-terminal point of view is elaborated with respect to MOS weak inversion translinear circuits, a class of circuits naturally very suitable for low-voltage and low-power applications. Some new circuits are described which sometimes are more suitable for low-voltage applications than bipolar translinear networks performing the same function. It is also shown that, using the back gate, translinear networks can be derived which cannot be realized with bipolar transistors. These network topologies increase the possibilities offered by translinear technology. As an example, measurement results of a low input-voltage current mirror and a sin(x)-circuit are shown.
机译:尽管MOS晶体管是四端子设备,但它最常用作三端子设备。因此,忽略了许多可能的MOS电路。在本简介中,针对MOS弱反相超线性电路阐述了四端的观点,MOS弱反相超线性电路自然很适合低压和低功耗应用。描述了一些新电路,这些电路有时比执行相同功能的双极跨线性网络更适合于低压应用。还显示出,使用背栅,可以推导出跨线性网络,这是双极晶体管无法实现的。这些网络拓扑增加了跨线性技术提供的可能性。例如,显示了低输入电压电流镜和sin(x)电路的测量结果。

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