A new design methodology for multiport SRAM cell

Feipei Lai; Ying Lang Chuang; Shyh Jong Chen

首页> 外文期刊>IEEE Transactions on Circuits and Systems. I, Regular Papers >A new design methodology for multiport SRAM cell

【24h】

A new design methodology for multiport SRAM cell

机译：多端口SRAM单元的新设计方法

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we propose a new design methodology for multiport SRAM cell. A traditional static 6T CMOS cell is adapted to the multiport SRAM cell by adding several wordline transistors, thereby allowing asynchronous reads and writes during an operands access stage using the read feature of the 5T cell and the write feature of the 6T cell. The stability of the SRAM cell is affected by the factors of p-transistor, n-transistor and pass-transistor, not by the absolute dimensions of the three transistors. The optimal read access curve can be used to obtain the fastest access time in the secure range for the general multiport SRAM cell

机译：在本文中，我们提出了一种用于多端口SRAM单元的新设计方法。通过添加几个字线晶体管，传统的静态6T CMOS单元适用于多端口SRAM单元，从而允许使用5T单元的读取功能和6T单元的写入功能在操作数访问阶段进行异步读取和写入。 SRAM单元的稳定性受p晶体管，n晶体管和传输晶体管的因素的影响，而不是受三个晶体管的绝对尺寸的影响。最佳读取访问曲线可用于在常规多端口SRAM单元的安全范围内获得最快的访问时间

著录项

来源
《IEEE Transactions on Circuits and Systems. I, Regular Papers》 |1994年第11期|p.677-685|共9页
作者
Feipei Lai; Ying Lang Chuang; Shyh Jong Chen;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类 TN71;
关键词
CMOS memory circuits; SRAM chips; circuit stability; integrated circuit design; asynchronous reads; asynchronous writes; design methodology; multiport SRAM cell; operands access stage; optimal read access curve; stability; static 6T CMOS cell; static RAM; wordline tr;

机译：CMOS存储器电路;SRAM芯片;电路稳定性;集成电路设计;异步读取;异步写入;设计方法;多端口SRAM单元;操作数访问级;最优读取访问曲线;稳定性;静态6T CMOS单元;静态RAM;字线tr;

相似文献

外文文献
中文文献
专利

1. A new design methodology for multiport SRAM cell [J] . Feipei Lai, Ying Lang Chuang IEEE Transactions on Circuits and Systems. 1 . 1994,第11期

机译：多端口SRAM单元的新设计方法
2. Multiport SRAM with BIST and Low Power DLL Design on FPGA Implementation [J] . Puneet Bharadwaj, Sunil Kumar Shah IOSR Journal of Electronics and Communication Engineering . 2019,第4期

机译：具有FPGA的BIST和低功耗DLL设计的多端口SRAM
3. Design Methodology for Quickly and Accurately Generating SRAMs [J] . Lee Tavrow, John Johnson, Mark Santoro Integrated System Design . 1998,第104期

机译：快速准确生成SRAM的设计方法
4. Stability analysis and design methodology of near-threshold 6T SRAM cells [C] . Reem El Senousy, Sameh Ibrahim, Wagdy Anis International Conference on Microelectronics . 2016

机译：近阈值6T SRAM单元的稳定性分析和设计方法
5. Design methodology for multiport antennas. [D] . Arceo, Diana. 2012

机译：多端口天线的设计方法。
6. Power optimized variation aware dual-threshold SRAM cell design technique [O] . Aminul Islam, Mohd Hasan 2011

机译：功耗优化的变化感知双阈值SRAM单元设计技术
7. SRAM cell design for stability methodology [O] . Clement Wann, Robert Wong, David Frankt, 2014

机译：用于稳定性方法的sRam单元设计
8. Design and demonstration of multiport cylinder dryer: final report on the multiport dryer project in phase 1 [R] . Choi, S. U. S., Yu, W., Wambsganss, M. W., 2001

机译：多端口圆筒干燥机的设计和演示：第一阶段多端口干燥机项目的最终报告

A new design methodology for multiport SRAM cell

摘要

著录项

相似文献

相关主题

期刊订阅