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首页> 外文期刊>IEEE transactions on device and materials reliability >A Degradation Model of Double Gate and Gate-All-Around MOSFETs With Interface Trapped Charges Including Effects of Channel Mobile Charge Carriers
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A Degradation Model of Double Gate and Gate-All-Around MOSFETs With Interface Trapped Charges Including Effects of Channel Mobile Charge Carriers

机译：带有界面陷阱电荷的双栅和全栅栅MOSFET的退化模型，包括沟道移动载流子的影响

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摘要

The reliability of multigate metal-oxide-semiconductor (MOS) devices is an important issue for novel nanoscale complementary MOS (CMOS) technologies. We present an analytic degradation model of double-gate (DG) and gate-all-around (GAA) MOS field-effect transistors (MOSFETs) in the presence of localized interface charge. Furthermore, we consider the effect of channel mobile charge carriers that significantly enhances the accuracy of our model. In our model, an accurate definition of threshold voltage in terms of minimum channel carrier density is used. The proposed model accurately depicts the effect of hot-carrier-induced degradation (HCD) on the surface potential, threshold voltage, and subthreshold swing. The results show a good agreement with the technology computer-aided design (TCAD) SENTAURUS device simulator over a wide range of device parameters. The modeling results show that the HCD effect become more dominant for scaled-down DG/GAA MOSFET devices. A comparative HCD degradation analysis carried for DG and GAA MOSFETs to understand their reliability limits show that GAA has greater immunity to HCD than DG MOSFET. This highlights model accuracy and provides crucial insights for HCD-tolerant multigate MOSFET design.
机译：对于新型纳米级互补MOS（CMOS）技术，多栅极金属氧化物半导体（MOS）器件的可靠性是一个重要的问题。我们提出了在存在局部接口电荷的情况下，双栅（DG）和环栅（GAA）MOS场效应晶体管（MOSFET）的解析退化模型。此外，我们考虑了信道移动电荷载波的影响，该影响显着提高了模型的准确性。在我们的模型中，使用了基于最小通道载流子密度的阈值电压的精确定义。所提出的模型准确地描述了热载流子引起的退化（HCD）对表面电势，阈值电压和亚阈值摆幅的影响。结果表明，在广泛的设备参数上，该技术与计算机辅助设计（TCAD）SENTAURUS设备模拟器具有良好的一致性。建模结果表明，对于按比例缩小的DG / GAA MOSFET器件，HCD效应变得更加明显。为了解DG和GAA MOSFET的可靠性极限而进行的比较性HCD退化分析表明，GAA比DG MOSFET对HCD的抵抗力更大。这突出了模型的准确性，并为耐HCD的多栅极MOSFET设计提供了重要的见解。

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