• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE transactions on electronics packaging manufacturing >Effect of laminated wafer toward dicing process and alternative double pass sawing method to reduce chipping
【24h】

Effect of laminated wafer toward dicing process and alternative double pass sawing method to reduce chipping

机译：叠层晶圆对切割工艺的影响以及替代的双程锯切方法以减少碎裂

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thin wafers of 100-/spl mu/m thickness laminated with die-attach film (DAF) was diced using a standard sawing process and revealed a low chipping crack resistance. Wafers laminated with conductive DAF shows greater chipping compared to nonconductive DAF and bare silicon wafer. It was found through scanning electron microscopy (SEM) micrographs, energy dispersive X-ray (EDX) analysis, and atomic force microscopy (AFM) that silver fillers in the conductive DAF was the cause of excessive blade loading which resulted in bad chipping quality. To reduce chipping/cracking induced by sawing, an alternative double-pass sawing method was developed and is explained in the paper. The methodology of this study discusses a double-pass method, where the first pass dice through the wafer and varied the percentage of DAF thickness cut. Best results were achieved when dicing through the wafer and 0% of DAF, followed by a full separation in the second pass. Approximately 80% of chipping reduction compared to conventional single pass.
机译：使用标准的锯切工艺对层压有芯片附着膜（DAF）的100- / splμm/ m厚度的薄晶片进行切割，结果显示出低的抗崩裂性。与非导电DAF和裸硅晶圆相比，用导电DAF层压的晶圆显示出更大的碎裂。通过扫描电子显微镜（SEM）显微照片，能量色散X射线（EDX）分析和原子力显微镜（AFM）发现，导电DAF中的银填充物是刀片负荷过大的原因，导致切片质量下降。为了减少锯切引起的崩裂/开裂，开发了一种替代的双道锯切方法，并在本文中进行了说明。这项研究的方法论讨论了一种双通道方法，该方法通过晶圆的第一通道切块并改变DAF厚度切割的百分比。当通过晶圆和0％的DAF进行切割时，获得最佳结果，然后在第二遍中完全分离。与传统的单次通过相比，减少了大约80％的切屑。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号