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首页> 外文期刊>IEEE Transactions on Magnetics >CoPt Antidot Arrays Fabricated With Dry-Etching Using AAO Templates
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CoPt Antidot Arrays Fabricated With Dry-Etching Using AAO Templates

机译:使用AAO模板进行干法蚀刻制造的CoPt Antidot阵列

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摘要

We demonstrate a technique to fabricate large-area, highly ordered CoPt antidot arrays with perpendicular orientation. Using ultrathin anodic aluminum oxide (AAO) templates as a dry etching mask, the pattern of the pore array was transferred to the film without deteriorating the magnetic properties, in particular coercivity and preferential perpendicular orientation. The size, spacing, and density of the nonmagnetic nano-columns within the CoPt antidot arrays can be adjusted by changing the fabrication parameters of the AAO templates. The nano-columns can serve as pinning sites, impeding the magnetic domain wall motion, which can influence the magnetic properties of the film. The magnetic properties of the antidot arrays depend sensitively on the antidot morphology. The coercivity () of the CoPt antidot array with a pore density of in fabricated using the AAO template anodized at 20 V is increased from 9.2 to 12.5 kOe due to the existence of such pinning sites.
机译:我们演示了一种制造具有垂直方向的大面积,高度有序的CoPt解毒剂阵列的技术。使用超薄阳极氧化铝(AAO)模板作为干蚀刻掩模,将孔阵列的图案转移到薄膜上,而不会降低磁性,特别是矫顽力和优先垂直取向。可以通过更改AAO模板的制造参数来调整CoPt反点阵列中非磁性纳米柱的大小,间距和密度。纳米柱可以用作钉扎位点,阻碍磁畴壁的运动,这会影响薄膜的磁性。解毒剂阵列的磁性能敏感地取决于解毒剂形态。由于存在这样的钉扎位点,使用在20 V阳极氧化的AAO模板制造的CoPt反点阵列的孔密度为in的矫顽力()从9.2 kOe增加到12.5 kOe。

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