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首页> 外文期刊>IEEE Transactions on Magnetics >Modeling of a Ferromagnetic Two-Dimensional Electron Gas Device
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Modeling of a Ferromagnetic Two-Dimensional Electron Gas Device

机译：铁磁二维电子气装置的建模

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We present a realistic modeling of ballistic electron transport in a hybrid ferromagnetic (FM) two-dimensional electron gas (2DEG) device, consisting of an FM gate on an AlGaAs-GaAs or AlSb-InAs high electron mobility transistor (HEMT) heterostructure. The carriers within the 2DEG are spin-polarized by a combination of magnetic and electrostatic barriers. The magnetic barriers are supplied by a composite FM gate, consisting of two domains made of magnetically hard and soft materials. This gate arrangement breaks the antisymmetry of the fringe B field, and results in a finite spin polarization of the 2DEG current. The B field strength is calculated by considering the pole strength at the gate surfaces and domain boundary, and is significantly weaker than normally assumed. We obtain parameters such as the electrostatic barrier height, Fermi level, and carrier concentration within the 2DEG by a finite-element Poisson calculation, which is self-consistent with the Fermi-Dirac distribution. We calculate the transmission probability and conductance through the 2DEG from these parameter values, assuming a single particle effective mass Hamiltonian and purely ballistic transport. We show that the spin polarization ratio P{sub}G is extremely sensitive to the gate bias and HEMT doping concentration. However, the maximum P{sub}G is extremely low for AlGaAs-GaAs (0.003%) and even for AlSb-InAs (0.12%) devices, despite a large Lande g factor. These values are many orders of magnitude smaller than previous predictions of close to 100% polarization, obtained by using simpler models.
机译：我们提出了在混合铁磁（FM）二维电子气（2DEG）装置中的弹道电子传输的逼真模型，该装置由AlGaAs-GaAs或AlSb-InAs高电子迁移率晶体管（HEMT）异质结构上的FM栅极组成。 2DEG中的载流子通过磁和静电势垒的组合而自旋极化。磁障由复合FM栅极提供，该复合FM栅极由硬磁和软磁材料制成的两个畴组成。这种栅极布置打破了边缘B场的反对称性，并导致2DEG电流的有限自旋极化。 B场强是通过考虑栅表面和畴边界处的极强度来计算的，并且比通常假定的要弱得多。我们通过有限元泊松计算获得诸如2DEG中的静电势垒高度，费米能级和载流子浓度等参数，这与费米-狄拉克分布是自洽的。假设单个粒子的有效质量哈密顿量和纯弹道运输量，我们从这些参数值计算通过2DEG的传输概率和电导。我们表明，自旋极化比P {sub} G对栅极偏置和HEMT掺杂浓度极为敏感。但是，尽管有很大的Lande g因子，但对于AlGaAs-GaAs（0.003％）甚至AlSb-InAs（0.12％）器件，最大P {sub} G都非常低。这些值比以前通过使用更简单的模型获得的接近100％极化的预测小了多个数量级。

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