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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements
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Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

机译：基于矢量大信号测量的简单准确的非线性设备模型参数估计方法

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摘要

To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (DC, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the model generation tremendously and only requires full two-port vectorial large-signal measurements. This paper reports on the results obtained with this new modeling technique applied to both empirical and artificial-neural-network device models. Experimental results are given for high electron-mobility transistors and MOSFETs. We also show that realistic signal excitations can easily be included in the optimization process.
机译：为了对微波频率下的非线性器件行为建模，需要精确的大信号模型。但是，估计模型参数的标准程序通常很麻烦，因为它涉及多个测量系统（DC，矢量网络分析仪等）。因此，我们提出了一种新的非线性建模技术，该技术极大地降低了模型生成的复杂度，并且仅需要完整的两端口矢量大信号测量。本文报告了将这种新的建模技术应用于经验和人工神经网络设备模型的结果。给出了高电子迁移率晶体管和MOSFET的实验结果。我们还表明，现实的信号激励可以轻松地包含在优化过程中。

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