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Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory

机译:用于高密度闪存的堆叠门控双位(SGTB)SONOS存储设备

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摘要

A novel stacked gated twin-bit SONOS memory for high-density nonvolatile flash memory is introduced. We introduced gated twin-bit (GTB) memory previously that has a cut-off gate and two memory nodes at a single wordline. To increase the density of the GTB memory integration, we stacked poly-silicon gates in a vertical direction. In a 4F$^2$ size, we can integrate 2 N memory nodes, where N is the number of stacked gates. In this paper, its fabrication method is introduced and electrical characteristics are investigated thoroughly by device simulations.
机译:介绍了一种用于高密度非易失性闪存的新型堆叠式门控双位SONOS存储器。我们之前介绍了门控双位(GTB)存储器,该存储器在单个字线上具有截止门和两个存储节点。为了增加GTB存储器集成的密度,我们在垂直方向上堆叠了多晶硅栅极。在4F $ ^ 2 $的大小中,我们可以集成2个N个存储节点,其中N是堆叠门的数量。本文介绍了其制造方法,并通过器件仿真对电气特性进行了全面研究。

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