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首页> 外文期刊>IEEE Transactions on Nuclear Science >2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements
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2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements

机译：低温光致发光光谱法测量氮化镓膜的2 MeV质子辐射损伤

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摘要

Gallium nitride (GaN) thin film samples were grown by ammonia-molecular beam epitaxy. Through room temperature transport measurements, electron mobilities of 560 cm/sup 2//Vs were observed for layers with a carrier density of 1.5/spl times/10/sup 17/ cm/sup -3/. Room temperature photoluminescence (PL) spectroscopy revealed the bound exciton transition at 363.0 nm and a weak yellow emission whose intensity was sample dependent. At 22 K, the main photoluminescence signal sharpened, shifted to 356.9 nm (3.474 eV), and the maximum intensity increased by a factor of one hundred; the intensity of the yellow emission decreased. The samples were irradiated at room temperature with 2 MeV protons at fluences of 10/sup 9/, 10/sup 10/, 10/sup 11/, 10/sup 12/, 10/sup 13/, 10/sup 14/, 10/sup 15/, and 10/sup 16/ cm/sup -2/. The intensity changes were within experimental error up to 10/sup 13/ cm/sup -2/. The drop in intensity of the bound exciton transition was 16% at 10/sup 14/ cm/sup -2/ and 99% at 10/sup 15/ cm/sup -2/. The radiation damage constant associated with the main PL peak at 3.474 eV in GaN is (1.4/spl plusmn/0.3)/spl times/10/sup -13/ cm/sup 2/, compared with (4/spl plusmn/1)/spl times/10/sup -11/ cm/sup 2/ associated with the main PL, peak at 1.492 eV in GaAs. For photonic applications, GaN is more robust than GaAs with respect to displacement damage.
机译：氮化镓（GaN）薄膜样品通过氨分子束外延生长。通过室温传输测量，对于载流子密度为1.5 / spl乘以10 / sup 17 / cm / sup -3 /的层，观察到电子迁移率为560 cm / sup 2 // Vs。室温光致发光（PL）光谱显示在363.0 nm处有束缚的激子跃迁和弱黄色发射，其强度取决于样品。在22 K时，主光致发光信号锐化，移至356.9 nm（3.474 eV），最大强度增加了一百倍。黄色发射的强度降低。在室温下用2 MeV质子以10 / sup 9 /，10 / sup 10 /，10 / sup 11 /，10 / sup 12 /，10 / sup 13 /，10 / sup 14 /的通量辐照样品。 10 / sup 15 /和10 / sup 16 / cm / sup -2 /。强度变化在高达10 / sup 13 / cm / sup -2 /的实验误差范围内。结合的激子跃迁的强度的下降在10 / sup 14 / cm / sup -2 /时为16％，在10 / sup 15 / cm / sup -2 /时为99％。与GaN中3.474 eV处的主要PL峰相关的辐射损伤常数为（1.4 / spl plusmn / 0.3）/ spl次/ 10 / sup -13 / cm / sup 2 /，而（4 / spl plusmn / 1） / spl times / 10 / sup -11 / cm / sup 2 /与主PL关联，在GaAs中以1.492 eV达到峰值。对于光子应用，就位移损伤而言，GaN比GaAs更坚固。

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