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首页> 外文期刊>IEEE Transactions on Nuclear Science >Damage induced in 100% internal carrier collection efficiency silicon photodiodes by 10-60 keV ion irradiation
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Damage induced in 100% internal carrier collection efficiency silicon photodiodes by 10-60 keV ion irradiation

机译：10-60 keV离子辐照在100％内部载流子收集效率高的硅光电二极管中引起的损伤

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摘要

We measure the change in the response of 100% internal carrier collection efficiency silicon photodiodes having 60 /spl Aring/ SiO/sub 2/ passivation layers due to the damage induced by bombardment with 10-60 keV ions of H, He, N, Ne, and Ar. We find an initially exponential decrease in responsivity with increasing ion fluence /spl Phi/ and use this to define a damage constant /spl beta/. The correlation of /spl beta/ with the nuclear stopping power of the incident ion instead of with the total energy lost to nuclear stopping indicates that damage in a channel lying within the n-type silicon near the Si-SiO/sub 2/ interface dominates the radiation-induced change in the photodiode response. We use a fluid model of electron transport in the channel to derive a universal curve to describe the damage as a function of ion fluence and to show that the damage constant /spl beta/ is proportional to the damage cross section. Over the energy range of this study, damage cross sections of N/sup +/, Ne/sup +/, and Ar/sup +/ are 10-100 times that of He/sup +/, and /spl sim/1000 times that of H.
机译：我们测量了具有60 / spl Aring / SiO / sub 2 /钝化层的100％内部载流子收集效率硅光电二极管的响应变化，该变化是由H，He，N，Ne的10-60 keV离子轰击引起的。和Ar。我们发现，随着离子通量/ spl Phi /的增加，响应度开始呈指数下降，并以此定义损伤常数/ spl beta /。 / spl beta /与入射离子的核阻止能力而不是与核阻止损失的总能量之间的相关性表明，位于Si-SiO / sub 2 /界面附近的n型硅内的沟道中的损伤占主导地位辐射引起的光电二极管响应变化。我们使用通道中电子传输的流体模型来导出通用曲线，以将损伤描述为离子通量的函数，并表明损伤常数/ spl beta /与损伤截面成正比。在这项研究的能量范围内，N / sup + /，Ne / sup + /和Ar / sup + /的破坏截面是He / sup + /和/ spl sim / 1000倍的10-100倍H的

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