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Investigations on the displacement damage dose effects induced by heavy ion irradiation in silicon PiN photodiodes: Implications for modeling and simulation

机译:PiN硅光电二极管中重离子辐照引起的位移损伤剂量效应的研究:对建模和仿真的意义

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摘要

In this paper, the displacement damage dose effects in PiN photodiodes is investigated using heavy ions experiments and numerical simulations realized thanks to Technology Computer Aided Design (TCAD) calculations. The parameter of interest is the dark current I_(DARK) delivered by the photodiode which evolves during the heavy ions irradiation. The main goal is to define a model which bridges the gap between the introduction of traps energy states localized in the Si bandgap and the electrical behavior (as dark current variation).
机译:在本文中,使用重离子实验研究了PiN光电二极管中的位移损伤剂量效应,并借助技术计算机辅助设计(TCAD)计算实现了数值模拟。感兴趣的参数是光电二极管传递的暗电流I_(DARK),该暗电流在重离子辐照期间产生。主要目标是定义一个模型,该模型弥合硅带隙中局部引入的陷阱能态和电行为(作为暗电流变化)之间的差距。

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