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The Benefits of SiC mosfets in a T-Type Inverter for Grid-Tie Applications

机译：T型逆变器中并网应用中SiC MOSFET的优势

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It is well known that multilevel converters can offer significant benefits in terms of harmonic performance and reduced switching losses compared to their two-level counterparts. However, for lower voltage applications the neutral-point-clamped inverter suffers from relatively large semiconductor conduction losses because the output current always flows through two switching devices. In contrast, the T-type multilevel inverter has less conduction losses because only a single outer loop switching device is required to connect the converter output to the upper and lower dc buses, albeit at the expense of increased switching losses since these outer switches must now block the full dc link voltage. Silicon carbide (SiC) mosfet devices potentially offer substantial advantage in this context with their lower switching losses, but the benefit of replacing all switching devices in a T-type inverter with SiC mosfets is not so clear-cut. This paper now explores this issue by presenting a detailed comparison of the use of Si and SiC devices for a three-level T-type inverter operating in grid-tie applications. The study uses datasheet values, switching loss measurements, and calibrated heat sink thermal measurements to precisely compare semiconductor losses for these two alternatives for a T-type inverter operating at or near unity power factor. The results show that replacing only the dc bus connection switches with SiC devices significantly reduces the semiconductor losses, allowing either the converter power level or the switching frequency to be significantly increased for the same device losses. Hence, the use of SiC mosfets for T-type inverters can be seen to be an attractive and potentially cost-effective alternative, since only two switching devices per phase leg need to be upgraded.
机译：众所周知，与两级转换器相比，多级转换器可以在谐波性能和降低开关损耗方面提供显着的优势。但是，对于低电压应用，由于输出电流始终流经两个开关器件，中性点钳位逆变器会遭受较大的半导体传导损耗。相比之下，T型多电平逆变器的传导损耗较小，因为仅需一个外部环路开关设备即可将转换器输出连接至上下直流母线，尽管这会增加开关损耗，因为这些外部开关现在必须阻止整个直流链路电压。在这种情况下，碳化硅（SiC）MOSFET器件具有较低的开关损耗，因而具有潜在的优势，但是用SiC MOSFET代替T型逆变器中的所有开关器件的好处并不十分明确。现在，本文通过对在并网应用中运行的三电平T型逆变器中Si和SiC器件的使用进行详细比较，来探讨这一问题。该研究使用数据表中的值，开关损耗测量值和校准的散热器热测量值，以精确比较在功率因数等于或接近于单位功率的T型逆变器的这两种替代方案中的半导体损耗。结果表明，仅用SiC器件代替直流总线连接开关就可以显着降低半导体损耗，对于相同的器件损耗，可以显着提高转换器的功率水平或开关频率。因此，可以将SiC MOSFET用于T型逆变器被视为一种有吸引力且具有潜在成本效益的替代方案，因为每个相脚仅需升级两个开关器件。

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    《IEEE Transactions on Power Electronics》 |2017年第4期|2808-2821|共14页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
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  • 正文语种 eng
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