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首页> 外文期刊>Power Electronics, IEEE Transactions on >IGBT Junction Temperature Measurement via Peak Gate Current
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IGBT Junction Temperature Measurement via Peak Gate Current

机译：通过峰值栅极电流测量IGBT结温度

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摘要

An electrical method for junction temperature measurement of MOS-gated power semiconductor devices is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an insulated-gate bipolar transistor or during turn-on. This voltage is directly proportional to the peak gate current, and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. Primary advantages of the method include an immunity to load current variation, and a good linear relationship with temperature. A measurement circuit can be integrated into a gate driver with no disruption to operation and allows autonomous measurements controlled directly via the gate signal. Advantages and disadvantages of the method are discussed.
机译：提出了一种用于测量MOS门控功率半导体器件结温的电气方法。测量方法涉及检测绝缘栅双极型晶体管的外部栅电阻上或接通期间的峰值电压。该电压与峰值栅极电流成正比，并且由于内部栅极电阻的温度相关电阻而随温度波动。该方法的主要优点包括对负载电流变化的抵抗力以及与温度的良好线性关系。测量电路可以集成到栅极驱动器中，而不会中断操作，并允许直接通过栅极信号控制自主测量。讨论了该方法的优缺点。

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