Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

Prume K.; Muralt P.; Calame F.; Schmitz-Kempen T.; Tiedke S.

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Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

机译：压电薄膜：评估MEMS器件的电气和机电特性

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We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e31,f and d33,f respectively. Additionally, the dielectric coefficient and the large signal electrical polarization are measured to add further important characteristics of the film. These data are essential for piezoelectric thin film process specification and the design and qualification of microelectromechanical systems devices

机译：我们提出了一种利用四点弯曲装置表征压电薄膜的新测量方法。结合单光束或双光束激光干涉仪，此设置可分别确定有效的横向和纵向压电系数e31，f和d33，f。另外，测量介电系数和大信号电极化以增加膜的其他重要特性。这些数据对于压电薄膜工艺规范以及微机电系统设备的设计和鉴定至关重要

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《IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control》 |2007年第1期|p.8-14|共7页
作者
Prume K.; Muralt P.; Calame F.; Schmitz-Kempen T.; Tiedke S.;
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正文语种 eng
中图分类声学工程;计量学;
关键词
dielectric polarisation; electric variables measurement; micromechanical devices; piezoelectric thin films; piezoelectricity; MEMS devices; dielectric coefficient; double-beam laser interferometer; electrical characteristics; electrical polarization; electromechan;

机译：介电极化;电变量测量;微机械装置;压电薄膜;压电;MEMS装置;介电系数;双光束激光干涉仪;电特性;电极化;机电;

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1. Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices [J] . Klaus Prume, Paul Muralt, Florian Calame, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2007,第期

机译：压电薄膜：评估MEMS器件的电气和机电特性
2. Electromechanical Properties Of Lanthanum-doped Lead Hafnate Titanate Thin Films For Integrated Piezoelectric Mems Applications [J] . C. Kuegeler, U. Boettger, T. Schneller Applied Physics . 2009,第4期

机译：集成压电薄膜的镧掺杂的钛酸铅钛酸盐薄膜的机电性能
3. Evaluation of electromechanical properties and field concentrations near electrodes in piezoelectric thick films for MEMS mirrors by simulations and tests [J] . Fumio Narita, Yasuhide Shindo, Koji Sato Computers & Structures . 2011,第11a12期

机译：通过仿真和测试评估MEMS镜压电厚膜中电极附近的机电性能和场集中
4. Integration, electrical and electromechanical properties of PZT and PMN-PT thin films for MEMS applications [C] . C. Kuegeler, M. Hoffmann, U. Boettger, Conference on Smart Structures and Materials 2002: Active Materials: Behavior and Mechanics, Mar 18-21, 2002, San Diego, USA . 2002

机译：用于MEMS应用的PZT和PMN-PT薄膜的集成度，电气和机电性能
5. Electrical and electromechanical properties of ferroelectric thin films for microelectromechanical applications. [D] . Chen, Jiayu. 1993

机译：用于微机电应用的铁电薄膜的电气和机电性能。
6. Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films [O] . Martin Fischeneder, Martin Oposich, Michael Schneider, 2018

机译：具有集成压电薄膜的MEMS悬臂的可调谐Q因子
7. Investigation of the Physical Properties, Performance and Application of MEMS Sensors Based on Bulk Acoustic Waves excited in Piezoelectric Thin Film Devices [O] . Weber Jan 2007

机译：基于压电薄膜器件激励的体声波的mEms传感器物理性能，性能及应用研究
8. Effects on Ferroelectric Thin-Film Stacks and Devices for Piezoelectric MEMS Applications at Varied Total Ionizing Dose (TID). [R] . Rivas, M., Brewer, S. J., Callaway, C., 2017

机译：不同总电离剂量（TID）对压电mEms应用的铁电薄膜叠层和器件的影响。

Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

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