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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Two-dimensional analysis of spurious modes in aluminum nitride film resonators
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Two-dimensional analysis of spurious modes in aluminum nitride film resonators

机译：氮化铝膜谐振器杂散模式的二维分析

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In this paper, a hybrid method, which combines the traditional concept of guided waves and the finite element method (FEM), is proposed to analyze the spurious modes of aluminum nitride (AlN) film with electrodes. First, the guided wave modes in the plated area are obtained by 1-D FEM. Second, a mode-match method is used to satisfy the boundary conditions. The vibration of the film resonator is a superposition of all of the guided modes. With respect to an AlN film resonator, which is a thickness-stretch mode resonator, we have identified three families of spurious modes: extension, thickness-stretch, and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed
机译：本文提出了一种将传统的导波概念与有限元方法（FEM）相结合的混合方法，以分析带电极的氮化铝（AlN）膜的杂散模式。首先，通过一维有限元法获得镀覆区域的导波模式。其次，使用模式匹配方法来满足边界条件。薄膜谐振器的振动是所有引导模式的叠加。对于AlN薄膜谐振器，它是厚度拉伸模式谐振器，我们已经确定了三类杂散模式：扩展，厚度拉伸和厚度剪切。计算了杂散模式的频谱，并讨论了杂散模式的影响

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