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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Beam-supported AlN thin film bulk acoustic resonators
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Beam-supported AlN thin film bulk acoustic resonators

机译：梁支撑的AlN薄膜体声谐振器

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摘要

A novel, suspended thin film bulk acoustic wave resonator (SFBAR) has been fabricated from an aluminum nitride film sputtered directly on a (100) silicon substrate. The suspended membrane design uses thin beams to support, as well as electrically connect, the resonator and has been fabricated using both thin film processing and bulk silicon micromachining. The quality factor and the effective electromechanical coupling coefficient were characterized as a function of the number and the length of the support beams. The length of the support beams was found to affect neither the quality factor at resonance nor the effective electromechanical coupling factor. However, longer support beams did facilitate better frequency pair response. Device performance varied with the number of support beams: 70% of the resonators tested showed a higher figure of merit with eight support beams than with four support beams.
机译：一种新颖的，悬浮的薄膜体声波谐振器（SFBAR）由直接溅射在（100）硅基板上的氮化铝膜制成。悬浮膜设计使用薄膜梁来支撑和电连接谐振器，并且已通过薄膜加工和体硅微机械加工制造。品质因数和有效机电耦合系数的特征在于支撑梁的数量和长度。发现支撑梁的长度既不影响共振时的品质因数也不影响有效的机电耦合因数。但是，更长的支撑波束确实有助于更好的频率对响应。器件性能随支撑梁的数量而变化：与四个支撑梁相比，测试的谐振器中有70％的谐振器具有八个支撑梁的品质因数更高。

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