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Investigation of cross talk in Kerfless annular arrays for high-frequency imaging

机译:无切口环形阵列高频成像中的串扰研究

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The effect of electromechanical cross talk in high-frequency (> 30 MHz) Kerfless annular arrays is investigated. Finite-element model predictions of the radiation patterns from arrays are compared to predictions from an ideal model without cross talk and with experimental measurements. High cross talk in the array causes element broadening and an increase in the amplitude of secondary lobes in the radiation pattern. However, an increase in the pulse ring-down time was not found. This can be attributed to the absence of lateral modes in the Kerfless substrate. The level of the pedestal secondary lobes in the two-way radiation pattern increases linearly with the element path difference. The element broadening increases the effective element path difference, which increases the pedestal level for a Kerfless annular array above the level for an ideal array. The broadening limits how close to an array one can image compared to the ideal case by reducing the contrast available in the image at small f-numbers. When the element broadening is taken into account by widening the electrode dimensions, the ideal radiation pattern agrees well with the finite-element model and experimental radiation patterns.
机译:研究了高频(> 30 MHz)无Kerfless环形阵列中机电串扰的影响。将阵列的辐射方向图的有限元模型预测与没有串扰和实验测量的理想模型的预测进行比较。阵列中的高串扰会导致元素变宽,并导致辐射方向图中的次瓣幅度增加。但是,没有发现脉冲振铃时间的增加。这可以归因于无er衬底中没有横向模式。双向辐射方向图上的基座次瓣的水平随元素路径差的增加而线性增加。元素加宽会增加有效元素路径差,从而使无K环形阵列的基座水平增加到理想阵列的水平之上。与理想情况相比,加宽通过减小f值小的图像中可用的对比度,限制了人们可以成像到阵列附近的距离。当通过扩大电极尺寸考虑元素加宽时,理想辐射图与有限元模型和实验辐射图非常吻合。

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