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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Comparative measurements of piezoelectric coefficient of PZT films by berlincourt, interferometer, and vibrometer methods
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Comparative measurements of piezoelectric coefficient of PZT films by berlincourt, interferometer, and vibrometer methods

机译：用贝林考特，干涉仪和振动计方法比较测量PZT膜的压电系数

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Chemical solution deposition (CSD) techniques were used to prepare lead zirconate (Zr) titanate (Ti) (PZT) thin films with Zr/Ti ratios of 30/70 and 52/48. Usually CSD processing is restricted to making crack-free, single-layer films of 70-nm thick, but modifications to the sol-gel process have permitted the fabrication of dense, crack-free, single layers up to 200 to 300 nm thick, which can be built-up into layers up to 3-mum thick. Thicker PZT films (>2-mum single layer) can be produced by using a composite sol-gel/ceramic process. Knowledge of the electroactive properties of these materials is essential for modeling and design of novel micro-electromechanical systems (MEMS) devices, but accurate measurement of these properties is by no means straightforward. A novel, double-beam, common-path laser interferometer has been developed to measure the longitudinal (d33) piezoelectric coefficient in films; the results were compared with the values obtained by Berlincourt and laser scanning vibrometer methods. It was found that, for thin-film samples, the d33,f values obtained from the Berlincourt method are usually larger than those obtained from the interferometer and the vibrometer methods; the reasons for this are discussed
机译：化学溶液沉积（CSD）技术用于制备Zr / Ti比为30/70和52/48的锆酸铅（Zr）钛酸酯（Ti）（PZT）薄膜。通常，CSD处理仅限于制造70纳米厚的无裂纹单层膜，但是对溶胶-凝胶工艺的修改允许制造厚度高达200至300纳米的致密，无裂纹单层，最多可将其堆积成3微米厚的层。可以通过使用溶胶-凝胶/陶瓷复合工艺生产更厚的PZT薄膜（> 2微米单层）。这些材料的电活性特性的知识对于新型微机电系统（MEMS）器件的建模和设计至关重要，但是准确地测量这些特性绝非易事。已经开发出一种新颖的双光束共通激光干涉仪来测量薄膜的纵向（d33）压电系数。将结果与Berlincourt和激光扫描振动计方法获得的值进行比较。结果发现，对于薄膜样品，通过Berlincourt方法获得的d33，f值通常大于通过干涉仪和振动计方法获得的d33，f值。讨论其原因

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