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首页> 外文期刊>Inorganic materials >Effect of a magnetron-sputtered MnO2 layer on the thermal oxidation kinetics of InP and the composition and morphology of the resultant films
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Effect of a magnetron-sputtered MnO2 layer on the thermal oxidation kinetics of InP and the composition and morphology of the resultant films

机译:磁控溅射MnO2层对InP热氧化动力学以及所得膜的组成和形态的影响

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摘要

It has been shown in the process of optimization of approaches to effective control over the formation of functional nanofilms on III-V semiconductors that the surface modification of InP with magnetronsputtered MnO2 nanolayers (25 nm thick) results in an oxygen transfer mechanism of the thermal oxidation of the semiconductor. The advantages of this approach are a higher rate of the increase in film thickness in comparison with stimulator-free oxidation, rapid chemical binding of indium, blocking of indium diffusion into the film, and accelerated phosphate formation. Changes in the composition of the films in comparison with those produced by stimulator-free oxidation lead to a considerable improvement in their surface quality (the roughness height does not exceed 20 nm and the average grain size is 55 nm).
机译:在有效控制III-V半导体上形成功能纳米膜的方法的优化过程中,已经表明,磁控溅射MnO2纳米层(厚度为25 nm)对InP的表面改性会导致热氧化的氧转移机制半导体。与无刺激物的氧化相比,该方法的优点是更高的膜厚增加速率,铟的快速化学键合,阻止铟扩散到膜中以及加速磷酸盐的形成。与通过无刺激剂氧化产生的膜相比,膜组成的变化导致其表面质量的显着改善(粗糙度高度不超过20 nm,平均粒径为55 nm)。

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