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On the delay of single-electron logic devices

机译：关于单电子逻辑器件的延迟

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Recent research on the modeling of switching speed in single-electron tunneling (SET) logic devices suggests that the delay in SET logic devices increases with a decreasing number of electrons involved in the logic operation. This result is based on the stochastic model of a sequence of tunnel events and on the so-called orthodox theory (OT) of single electronics. In fact, it predicts that the SET gate delay in really single-electron logic gates (those in which the logic operation is performed by a SET event) is significantly degraded and might even rule out such logic. However, as is shown in this paper, the results are only a consequence of the modeling of SET devices with the OT, not of the applied correct statistical simulation model. If we combine this stochastic model and the modeling of SET devices with the impulse circuit model, this degradation does not appear, due to continuous charging of the tunneling junction. And SET logic operations might be still possible for real single-electron logic.
机译：对单电子隧穿（SET）逻辑器件中的开关速度建模的最新研究表明，SET逻辑器件中的延迟随着逻辑运算中涉及的电子数量的减少而增加。此结果基于一系列隧道事件的随机模型以及单个电子器件的正统理论（OT）。实际上，它预测真正的单电子逻辑门（那些通过SET事件执行逻辑操作的逻辑门）中的SET门延迟将大大降低，甚至可能排除这种逻辑。但是，如本文所示，结果仅是使用OT对SET设备建模的结果，而不是所应用的正确统计仿真模型的结果。如果我们将这种随机模型和SET器件的模型与脉冲电路模型相结合，由于隧道结的持续充电，不会出现这种退化。对于真正的单电子逻辑，SET逻辑运算仍然可能。

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