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Method for Manufacturing a Single-Electron Logic Device operating at Room Temperature
Method for Manufacturing a Single-Electron Logic Device operating at Room Temperature
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机译:在室温下工作的单电子逻辑器件的制造方法
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摘要
A single-electron logic device operating in room temperature and a method of manufacture thereof are provided to suppress the influence for the operation of the single-electron transistor. The oxide film is deposited in the top of the substrate to form the base substrate. The substrate is selectively etched to define the nano wire framework region. The polysilicon layer(40) and oxide film(30) are successively deposited on the nano wire framework region. The oxide film and polysilicon layer are selectively etched to expose one part of the nano wire framework region. The source and drain are formed while the quantum dot is formed in the silicon layer of the exposed nano wire structure. The gate(70) is formed in the space between the drain and the source.
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