We fabricated a single-electron device that is useful as a unit device for single-electron logic circuits. The device is a three-current-terminal device fabricated on a silicon-on-insulator (SOI) wafer, which includes two Si islands whose electric potential can be controlled by gates. Sub-50-nm Si islands were integrated in an area smaller than 0.02 /spl mu/m/sup 2/ through self-aligned formation of the islands by pattern-dependent oxidation (PADOX) of a T-shaped wire. By PADOX, each island was embedded in one branch of the T-shaped wire. We show two electrical characteristics which demonstrate the usefulness of this device as a circuit element. First, current switching between two branches was performed at 30 K by using gate voltage to control the Coulomb blockade in each island. Second, a correlation between the two currents was observed because the two islands were integrated close to each other. The latter indicates a capacitive coupling between the islands, which opens up the possibility of one-by-one transfer of electrons in this device. These findings show that the proposed island-integration technique is applicable to making ultra-low-power and highly integrated single-electron circuits.
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机译：我们制造了单电子器件，可用作单电子逻辑电路的单元器件。该器件是在绝缘体上硅（SOI）晶圆上制造的三电流端子器件，该器件包括两个Si岛，其电势可通过栅极控制。通过T型导线的图案依赖性氧化（PADOX）自对准形成岛，将小于50 nm的Si岛集成在小于0.02 / spl mu / m / sup 2 /的区域中。通过PADOX，每个岛都嵌入T形线的一个分支中。我们展示了两个电气特性，这些特性证明了该设备作为电路元件的有用性。首先，通过使用栅极电压控制每个岛中的库仑阻塞，以30 K的电流在两个分支之间进行电流切换。第二，观察到两个电流之间的相关性，因为两个岛彼此靠近整合。后者表示岛之间的电容耦合，从而打开了该器件中电子一对一转移的可能性。这些发现表明，所提出的岛集成技术适用于制造超低功率和高度集成的单电子电路。
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