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Multiscale thermal device modeling using diffusion in the Boltzmann Transport Equation

机译:使用玻耳兹曼输运方程中的扩散进行多尺度热装置建模

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摘要

Thermal modeling of some nano-scale devices requires attention to multiple length scales and physical phenomena, ranging from continuum level heat diffusion to atomic-scale interactions and phonon confinement. At the nanometer-scale, thermal phenomena such as ballistic phonon transport may be important. The present paper uses a multiscale thermal modeling approach including diffusion in the Boltzmann Transport Equation (BTE) to study heat transport in several applications like Silicon on Insulator transistors, Si thin films with heat pulse, a Si thin film sandwiched between two bulk layers of Silicon dioxide as in solar cells. Analytical solutions of both a multilayered Fourier model and a simple gray BTE with and without a diffusion term in the steady state are computed. Thermal modeling and analysis of some of these applications is performed using the COMSOL Multiphysics finite element software package. The BTE model with and without diffusion for multilayers is discussed for interface conditions involving reflectance and transmittance of phonons. The results obtained from the models are compared to existing published results for Si/Si, Si/Diamond layers and are found to be in good agreement.
机译:一些纳米级设备的热建模需要注意多种长度尺度和物理现象,范围从连续水平的热扩散到原子尺度的相互作用和声子约束。在纳米级,诸如弹道声子传输的热现象可能很重要。本文使用多尺度热建模方法,包括在玻耳兹曼输运方程(BTE)中进行扩散,以研究多种应用中的热输运,例如绝缘体晶体管上的硅,具有热脉冲的Si薄膜,夹在两个硅体层之间的Si薄膜像太阳能电池一样。计算了在稳态下具有和不具有扩散项的多层傅里叶模型和简单灰色BTE的解析解。使用COMSOL Multiphysics有限元软件包对其中一些应用程序进行热建模和分析。针对涉及声子反射率和透射率的界面条件,讨论了具有和不具有多层扩散的BTE模型。从模型中获得的结果与Si / Si,Si / Diamond层的现有已发布结果进行了比较,发现它们具有很好的一致性。

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