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首页> 外文期刊>International Journal of Heat and Mass Transfer >Large 'near junction' thermal resistance reduction in electronics by interface nanoengineering
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Large 'near junction' thermal resistance reduction in electronics by interface nanoengineering

机译：通过界面纳米工程技术可大幅降低电子产品的“近结”热阻

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摘要

Nonequilibrium molecular dynamics simulations were employed to provide a new perspective to the issue of cooling of high power electronic and photonic components and were focused on developing approaches to enhance "near junction" thermal transport in devices where the heat flux in the microscopic active region could be as high as several kW/mm2. A GaN-AlN-SiC interface serves as our model system. The three distinct mechanisms investigated that all increase heat dissipation (reduce thermal resistance) at the GaN-AlN-SiC interfaces are epitaxial growth of GaN on a smooth SiC surface, engineered three-dimensional interlaced GaN and SiC nanopillars at the interface to modify the vibrations of interfacial atoms by taking advantage of the nanoconfinement effect, and deposition of a thin A1N layer or Al_xGa_(1-x)N (0 < x < 1) heterostructures sandwiched in the GaN-SiC gap to serve as a phonon bridge. The heat dissipation is quantified in terms of the interfacial thermal conductance, by imposing a one -dimensional heat flux across the simulation domain. The total thermal conductance across the interface was enhanced by up to 55%, compared to a bare GaN-SiC surface. Moreover, for both epitaxial and non-epitaxial Al_xGa(1-x)N heterostructures the overall thermal conductance increases monotonically with Al content. The conductance for a 1 nm thick Al_xGa_(1_x)N only depends on the Al content and is independent of the Al distribution in the heterostructure.
机译：非平衡分子动力学模拟被用来为大功率电子和光子组件的冷却问题提供新的视角，并专注于开发增强器件中“近结”热传输的方法，在这些器件中，微观有源区中的热通量可能是高达几千瓦/平方毫米。 GaN-AlN-SiC界面用作我们的模型系统。研究了三种不同的机制，即增加了GaN-AlN-SiC界面处的散热（降低热阻）的原因是GaN在光滑SiC表面上的外延生长，在界面处设计了三维交织的GaN和SiC纳米柱以修改振动利用纳米约束效应来沉积界面原子，并沉积一层薄的AlN层或夹在GaN-SiC间隙中的Al_xGa_（1-x）N（0

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  • 来源
    《International Journal of Heat and Mass Transfer》 |2011年第26期|p.5183-5191|共9页
  • 作者

    Ming Hu; Xiaoliang Zhang; Dimos Poulikakos; Costas P. Grigoropoulos;

  • 作者单位

    Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland;

    Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland,Center for Heat and Mass Transfer, Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China;

    Laboratory of Thermodynamics in Emerging Technologies, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland;

    Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electronics cooling; near transistor junction; interfacial thermal resistance; molecular dynamics;

    机译：电子冷却;晶体管结附近;界面热阻;分子动力学;

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