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首页> 外文期刊>International journal of materials science >Description of ECR Plasma Device Assembled and Surface Study of GaAs Wafer in CFC Discharge at Various Parameters
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Description of ECR Plasma Device Assembled and Surface Study of GaAs Wafer in CFC Discharge at Various Parameters

机译：各种参数下ECR等离子体设备组装说明和GaAs晶片在CFC放电中的表面研究

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The description of ECR Plasma system consisting of microwave source, magnet, rf biased substrate holder, MFC's etc. has been discussed in detail. In order to fabricate high frequency transistor, one require the delineation of small gate lengths and appropriate recessing of channel material which in turn require controlled etching steps. Anisotropic nature of the conventional wet etching technique leaves the geometry of the gate ill defined. This problem is overcome by using ECR etching technique. A well-defined geometry reduces parasitic which allows high frequency operation of the device. ECR plasma etching of GaAs in CCl_2F_2/Ar discharge with rf biasing was investigated at different flow rate ratio and etching time. Etching experiments were carried out at pressure range between 0.015 to 0.020 mbar, rf power density 0.39 W/cm2 and microwave current 150 mA. The etch depths were measured by Dektek Profilometry and the surface morphology had been studied with Scanning Electron Microscopy. This paper reports the etch results of GaAs wafer obtained with various gas flow rates of CCl_2F_2 /Ar and different etch time.
机译：详细讨论了ECR等离子系统的组成，该系统由微波源，磁体，射频偏压基板支架，MFC等组成。为了制造高频晶体管，需要描绘出较小的栅极长度并适当地凹入沟道材料，这又需要受控的蚀刻步骤。传统湿法蚀刻技术的各向异性性质使栅极的几何形状不明确。通过使用ECR蚀刻技术可以解决此问题。良好定义的几何形状可减少寄生现象，从而允许器件进行高频操作。研究了在不同流量比和刻蚀时间下，Cf_2F_2 / Ar放电中带有rf偏压的GaAs的ECR等离子体刻蚀。蚀刻实验在0.015至0.020 mbar的压力范围，rf功率密度0.39 W / cm2和微波电流150 mA的条件下进行。通过Dektek轮廓仪测量蚀刻深度，并且已经通过扫描电子显微镜研究了表面形态。本文报道了在不同的CCl_2F_2 / Ar气体流量和不同的蚀刻时间下获得的GaAs晶片的蚀刻结果。

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