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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Mechanical nanogap switch for low-power on-board electronics
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Mechanical nanogap switch for low-power on-board electronics

机译：机械纳米间隙开关，用于低功耗车载电子设备

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摘要

This paper presents the design fabrication and measurement of a nanogap radio frequency microelectromechanical system (RF MEMS) metal-contact switch. The prosed device generates a relatively high contact force with a low actuation voltage using a dielectric layer between the actuation electrode and the moveable beam. The actuation voltage is decreased with good reliability of the device by scaling down the gap. Beam geometry optimization allowed reaching 126 micronewtons contact force with only 10 V bias voltage. The fabricated miniature switch ( 80 x 50 x 0.95 mu m) has indeed a pull-down voltage of 6 V and a contact resistance <2 Omega V with 10 V bias applied. By measuring the S-parameters, the up-state capacitance has been fitted to 22 fF. The remarkable figure-of-merit Ron x Cup = 44 fs reflects the good performance of the device. A cycling test showed the device operated for 90 min without any charging problem noted.
机译：本文介绍了纳米间隙射频微机电系统（RF MEMS）金属接触开关的设计制造和测量。使用驱动电极和可移动​​梁之间的介电层，被控制的设备以较低的驱动电压产生相对较高的接触力。通过缩小间隙，可以降低驱动电压，从而提高设备的可靠性。射束几何形状优化允许仅10 V的偏置电压即可达到126微牛顿的接触力。制成的微型开关（80 x 50 x 0.95μm）确实具有6 V的下拉电压，并且施加了10 V偏压时的接触电阻<2 OmegaV。通过测量S参数，可以将向上状态电容设置为22 fF。卓越的品质因数Ron x Cup = 44 fs反映了该设备的良好性能。循环测试显示该设备运行了90分钟，未发现任何充电问题。

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