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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements
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Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements

机译：非易失性多偏置S参数测量的电荷保守GaN HEMT非线性建模

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摘要

Guaranteeing charge conservation of empirically extracted Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and artifacts in the prediction. However, dispersive effects, such as thermal and charge-trapping phenomena, may compromise the model extraction flow resulting in poor model accuracy. Although GaN HEMT models should be extracted, in principle, from an isodynamic dataset, this work deals with the systematic identification of an approximate, yet most suitable, charge-conservative empirical model from standard multi-bias S-parameters, i.e., from non-isodynamic data. Results show that the obtained model maintains a reasonable accuracy in predicting both small- and large-signal behavior, while providing the benefits of charge conservation.
机译：在避免预测中的模拟问题和伪影是必要的，保证经验提取的氮化镓（GaN）高电子迁移率晶体管（HEMT）模型的氮化镓（GaN）。然而，诸如热和电荷捕获现象的分散效应可能会损害模型提取流量，导致模型精度不佳。虽然原则上，应该从惰性地数据集中提取GaN HEMT模型，但这项工作涉及系统识别标准多偏置S参数的近似且最合适，充电保守的经验模型，即来自非电气动力学数据。结果表明，所获得的模型在预测小型和大信号行为的同时保持合理的准确性，同时提供了充电保护的好处。

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