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Analysis of delay fault in GNR power interconnects

机译:GNR电源互连中的延迟故障分析

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In this paper, a delay fault model for multilayer graphene nanoribbon (GNR)-based power interconnects for 16-nm International Technology Roadmap for Semiconductors technology node is developed for both top-contact GNR and side-contact GNR. The delay fault model is developed for different temperature considering the impact of scattering parameters. It is shown that side-contact GNR-based power interconnects can reduce the delay fault significantly in comparison with that of Cu and top-contact GNR interconnects at local, intermediate, and global lengths for a wide range of chip operating temperatures from 233K to 378K.
机译:本文针对顶部接触式GNR和侧面接触式GNR,开发了基于多层石墨烯纳米带(GNR)的16纳米国际半导体技术路线图的电源互连的延迟故障模型。考虑散射参数的影响,针对不同温度开发了延迟故障模型。结果表明,在233K到378K的广泛芯片工作温度范围内,与基于局部接触,中间接触和整体长度的Cu和顶部接触式GNR互连相比,基于侧面接触式GNR的电源互连可以显着减少延迟故障。 。

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