Simulation of nanometer-scale semiconductor devices considering quantum effects

Eiichi Sano

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Simulation of nanometer-scale semiconductor devices considering quantum effects

机译：考虑量子效应的纳米级半导体器件仿真

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It is necessary to take quantum effects into account in the design of nanometer-scale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage characteristics of nanometer-scale InP-based HEMTs and to ensemble Monte Carlo (EMC) simulations of transit times in InP-based HBTs. The simulated results are compared with the experimental results in order to validate the method. We conclude that device simulations incorporating the effective potential method are very useful for designing millimeter-wave HEMTs and HBTs.

机译：在设计纳米级高电子迁移率晶体管（HEMT）和异质结双极晶体管（HBT）时，必须考虑量子效应。为此，将一种有效的电势方法应用于基于漂移扩散（DD）的基于纳米InP的HEMT阈值电压特性的仿真以及基于InP的整体蒙特卡洛（EMC）的穿越时间仿真HBT。将仿真结果与实验结果进行比较，以验证该方法。我们得出的结论是，结合有效电势方法的设备仿真对于设计毫米波HEMT和HBT非常有用。

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来源
《International journal of RF and microwave computer-aided engineering》 |2004年第3期|p. 283-289|共7页
作者
Eiichi Sano;
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作者单位

Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan;

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原文格式 PDF
正文语种 eng
中图分类计算技术、计算机技术;
关键词
heterojunction; drift-diffusion model; Monte Carlo; quantum effect; HEMT; HBT;

机译：异质结;漂移扩散模型;蒙特卡洛;量子效应;HEMT;LGBT;
入库时间 2022-08-17 13:31:15

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专利

1. 2-D Simulation of Quantum Effects in SmallSemiconductor Devices Using QuantumHydrodynamic Equations [J] . Jing-RongZhou, David K.Ferry VLSI Design . 1995,第2期

机译：使用量子水动力方程对小型半导体器件中的量子效应进行二维模拟
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机译：量子校正漂移扩散模型在纳米半导体器件中隧穿效应的数值模拟
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机译：暗场电子全息图研究纳米级SiGe半导体器件硅化过程中的应变演化
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机译：具有超薄栅极氧化物的纳米级MOSFET的仿真，包括完整的2维量子力学效应和栅极隧穿电流
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机译：具有近表面电子的半导体量子器件设计的数值模拟。
6. 3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices [O] . Candong Cheng, Joon-Ho Lee, Kim Hwa Lim, -1

机译：基于完美匹配层和光谱元素方法的3D量子传输解算器用于半导体纳米器件的仿真
7. Quantum Corrected Drift-Diffusion Modeling and Simulation of Tunneling Effects in Nanoscale Semiconductor Devices [O] . G. Cassano, C. de Falco, C. Giulianetti, 2006

机译：纳米级半导体器件中的量子校正漂移扩散建模和隧穿效应仿真
8. 2-D Simulation of Quantum Effects in Small Semiconductor Devices Using QuantumHydrodynamic Equations [R] . Zhou, J. R., Ferry, D. K. 1995

机译：用量子流体动力学方程对小型半导体器件中量子效应的二维模拟

Simulation of nanometer-scale semiconductor devices considering quantum effects

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