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Simulation of nanometer-scale MOSFET's with ultra-thin gate oxide including full 2-dimemsional quantum mechanical effects and gate tunneling current

机译：具有超薄栅极氧化物的纳米级MOSFET的仿真，包括完整的2维量子力学效应和栅极隧穿电流

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来源
《》|2002年|P.435-438|共4页
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Yutao Ma; Lifeng Chen; Jing Wang;
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中图分类无线电电子学、电信技术;
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1. Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation [J] . E. Cassan, S. Galdin, P. Dollfus, Physica, B. Condensed Matter . 1999,第1a4期

机译：使用蒙特卡罗模拟分析超薄栅极氧化物n-MOSFET中的电子能量分布函数以直接隧穿栅极电流
2. Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs [J] . E. Cassan, P. Dollfus, S. Galdin Microelectronics & Reliability . 2000,第4a5期

机译：通过MOSFET和H-MOSFET中的超薄氧化物和氧化物/氮化物叠层计算直接隧穿栅极电流
3. Drain Current Models For Single-Gate Mosfets & Undoped Symmetric & Asymmetric Double-Gate SOI Mosfets And Quantum Mechanical Effects: A Review [J] . SUBHA SUBRAMANIAM, R.N.AWALE, SANGEETA M.JOSHI International Journal of Engineering Science and Technology . 2013,第1期

机译：单栅MOSFET，未掺杂对称和非对称双栅SOI MOSFET的漏电流模型和量子力学效应：综述
4. Simulation of nanometer-scale MOSFET's with ultra-thin gate oxide including full 2-dimensional quantum mechanical effects and gate tunneling current [C] . Yutao Ma, Lifeng Chen, Jing Wang, . 2002

机译：具有超薄栅极氧化物的纳米级MOSFET的仿真，包括全二维量子力学效应和栅极隧穿电流
5. Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current. [D] . Bohannon, Eric. 2011

机译：超薄氧化物CMOS技术中的模拟集成电路设计，具有显着的直接隧穿感应栅极电流。
6. Gating current harmonics. II. Model simulations of axonal gating currents. [O] . J F Fohlmeister, W J Adelman Jr 1985

机译：门控电流谐波。二。轴突门控电流的模型仿真。
7. 2D Simulation of Gate Currents in MOSFETs: Comparison between S-Device and the Quantum Mechanical Simulator GreenSolver [O] . Andreas Schenk, Mathieu M. Luisier 2009

机译：mOsFET中栅极电流的二维模拟：s-Device与量子力学模拟器Greensolver之间的比较
8. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides [R] . Asenov, Asen, Saini, S. 2000

机译：多晶硅栅极对具有薄栅氧化层的亚100nm mOsFET中随机掺杂诱导阈值电压波动的影响

Simulation of nanometer-scale MOSFET's with ultra-thin gate oxide including full 2-dimemsional quantum mechanical effects and gate tunneling current

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