Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

E. Cassan; P. Dollfus; S. Galdin

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Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

机译：通过MOSFET和H-MOSFET中的超薄氧化物和氧化物/氮化物叠层计算直接隧穿栅极电流

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This theoretical work investigates some aspects of direct tunneling gate current in ultra-thin gate MOSFET, as influence of bias, oxide thickness, and oxide thickness fluctuations. We study two alternative device architectures to reduce this effect. They consist in either increasing the insulator thickness using a high permitivity nitride/oxide stack or burying the channel, due to a tensile strained IV-IV heterostructure. The presented calculations have been performed by coupling a semi-classical approach of direct tunneling computation with the 2D Monte Carlo device simulation.

机译：这项理论工作研究了超薄栅极MOSFET中直接隧穿栅极电流的某些方面，如偏置，氧化物厚度和氧化物厚度波动的影响。我们研究了两种替代的设备架构来减小这种影响。由于采用拉伸应变的IV-IV异质结构，它们要么采用高介电常数的氮化物/氧化物叠层来增加绝缘体的厚度，要么将沟道掩埋。通过将直接隧道计算的半经典方法与2D蒙特卡洛设备仿真相结合来执行所提出的计算。

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《Microelectronics & Reliability》 |2000年第5期|585-588|共4页
作者
E. Cassan; P. Dollfus; S. Galdin;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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专利

1. Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation [J] . E. Cassan, S. Galdin, P. Dollfus, Physica, B. Condensed Matter . 1999,第1a4期

机译：使用蒙特卡罗模拟分析超薄栅极氧化物n-MOSFET中的电子能量分布函数以直接隧穿栅极电流
2. Importance of complex band models in calculation of direct tunneling current through ultra-thin gate oxides [J] . Atsushi Sakai, Yoshinari Kamakura, Masato Morifuji, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第321期

机译：复杂能带模型在通过超薄栅极氧化物的直接隧穿电流计算中的重要性
3. Importance of complex band models in calculation of direct tunneling current through ultra-thin gate oxides [J] . Atsushi Sakai, Yoshinari Kamakura, Masato Morifuji, 電子情報通信学会技術研究報告. VLSI設計技術. VLSI Design Technologies . 2001,第319期

机译：复杂能带模型在通过超薄栅极氧化物的直接隧穿电流计算中的重要性
4. Modeling of direct tunneling gate current in ultra-thin gate oxide MOSFETs: a comparison between simulators [C] . Cassan, E., Galdin, . 1999

机译：超薄栅极氧化物MOSFET中直接隧穿栅极电流的建模：仿真器之间的比较
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices [O] . Rathnait D. Long, Paul C. McIntyre 2012

机译：氮化镓基金属氧化物半导体器件的表面制备和沉积的栅极氧化物
7. Stress-induced leakage current in dual-gate CMOSFETS with thin nitrided gate oxides [O] . HUANG JINSHENG 2005

机译：带有薄氮化栅氧化物的双栅CMOSFET中应力引起的泄漏电流

Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

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