A high-efficiency 50 WX-band GaN power amplifier in hybrid MIC technology

Amirhossein Ahmadi; Hamidreza Moazzen; Roghieh Karimzadeh Baee; Parvin Sojoodi Sardrood

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A high-efficiency 50 WX-band GaN power amplifier in hybrid MIC technology

机译：混合MIC技术的高效50 WX带GaN功率放大器

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In this paper, the design, fabrication, and measurement results of a two-stageX-band highly efficient 50 W power amplifier are presented. In the designapproach, two 0.25 μm bare-die GaN on SiC transistors, where one of themhas the largest gate periphery on the market, are chosen. A considerably highsaturated power gain of more than 20 dB and better than 40% power-addedefficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulatedmeasurements demonstrate an average output power of 40 W with good linearityspecifications. Thermal assessment from measurement results ensurestransistors' durability.

机译：本文的设计，制造和测量结果为两阶段提出了X频段高效50 W功率放大器。在设计中方法，在SiC晶体管上进行两个0.25μm裸模GaN，其中一个选择市场上最大的门周边。一个相当高的饱和功率增益超过20 dB，更优于40％的加压在10.9至11.1 GHz带宽上实现效率（PAE）。调制测量显示了40 W的平均输出功率，线性良好规格。测量结果中的热评估确保晶体管的耐用性。

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来源
《International journal of RF and microwave computer-aided engineering》 |2021年第2期|e22506.1-e22506.13|共13页
作者
Amirhossein Ahmadi; Hamidreza Moazzen; Roghieh Karimzadeh Baee; Parvin Sojoodi Sardrood;
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作者单位

Faculty of Communications Technology Iran Telecommunication Research Center Tehran Iran;

Faculty of Communications Technology Iran Telecommunication Research Center Tehran Iran;

Faculty of Communications Technology Iran Telecommunication Research Center Tehran Iran;

Faculty of Communications Technology Iran Telecommunication Research Center Tehran Iran;

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正文语种 eng
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关键词
GaN-die, high efficiency, high power, matching networks, power amplifier;

机译：Gan-Die;高效率;高功率;匹配网络;功率放大器;

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1. A C-Band High-Efficiency Second-Harmonic-Tuned Hybrid Power Amplifier in GaN Technology [J] . Paolo Colantonio, Franco Giannini, Rocco Giofre, IEEE Transactions on Microwave Theory and Techniques . 2006,第6期

机译：GaN技术中的C波段高效二次谐波调谐混合功率放大器
2. Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1-4 GHz range [J] . CHAMSSEDINE BERRACHED, DIANE BOUW, MARC CAMIADE, International Journal of Microwave and Wireless Technologies . 2015,第1期

机译：使用MIC和准MMIC技术的1-4 GHz范围内的宽带，高效率，高功率GaN放大器
3. High-efficiency ultra-wideband power amplifier in GaN technology [J] . P. Colantonio, F. Giannini, R. Giofre, Electronics Letters . 2008,第2期

机译：GaN技术的高效超宽带功率放大器
4. A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier [C] . van der Heijden Mark P., Acar Mustafa, Maroldt Stephan IEEE MTT-S International Microwave Symposium . 2013

机译：集成封装的50W高效RF CMOS-GaN E类功率放大器
5. High-efficiency switched-mode power amplifier using gallium nitride on silicon HEMT technology [D] . Panesar, Harpreet 2007

机译：在硅HEMT技术上使用氮化镓的高效开关模式功率放大器
6. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells [O] . Seil Kim, Min-Pyo Lee, Sung-June Hong, 2018

机译：利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
7. X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning [O] . Chen Jin, Yuan Gao, Wei Chen, 2019

机译：X频段高效连续等级B功放GaN MMIC输入二次谐波调谐

A high-efficiency 50 WX-band GaN power amplifier in hybrid MIC technology

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