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首页> 外文期刊>International review of electrical engineering >Multi-Objective Gate Driver Design for a GaN-Based Half-Bridge Converter to Optimize Efficiency and Near-Field EMI
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Multi-Objective Gate Driver Design for a GaN-Based Half-Bridge Converter to Optimize Efficiency and Near-Field EMI

机译：基于GAN的半桥转换器的多目标栅极驱动器设计，优化效率和近场EMI

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Wide band gap devices are inevitably the future of power electronic converters. However, their high switching speeds make the gate driver design a challenging task. In this way, parameterization of the gate driver resistors is critical to determine the slew rate and consequently the produced power loss and electromagnetic noise of the switch. To address these issues, in this paper, a post-prototyping multi-objective optimization method is introduced in order to parameterize the gate driver resistors. The method then is applied on a GaN-based half-bridge converter to reduce both power loss and electromagnetic noise. To evaluate the electromagnetic noise, near-field EMI of the GaN device is considered. Finally, the experimental results are provided to show the effectiveness of the method.
机译：宽带隙装置不可避免地是电力电子转换器的未来。 然而，它们的高开关速度使栅极驱动器设计成为一个具有挑战性的任务。 以这种方式，栅极驱动电阻器的参数化对于确定转换速率至关重要，从而产生开关的产生功率损耗和电磁噪声。 为了解决这些问题，在本文中，引入了一种原型开发的多目标优化方法，以便参数化栅极驱动电阻器。 然后该方法应用于GaN的半桥转换器，以减少功率损耗和电磁噪声。 为了评估电磁噪声，考虑GaN设备的近场EMI。 最后，提供了实验结果以表明该方法的有效性。

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