Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Maekawa Keiichi; Makiyama Hideki; Yamamoto Yoshiki; Hasegawa Takumi; Okanishi Shinobu; Sonoda Kenichiro; Shinkawata Hiroki; Yamashita Tomohiro; Kamohara Shiro; Yamaguchi Yasuo

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Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

机译：整体和完全耗尽的绝缘体上硅金属氧化物半导体场效应晶体管中低频噪声可变性成分的综合分析

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The low-frequency noise (LFN) variability in bulk and fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with silicon on thin box (SOTB) technology was investigated. LFN typically shows a flicker noise component and a signal Lorentzian component by random telegraph noise (RTN). At a weak inversion state, the random dopant fluctuation (RDF) in a channel is strongly affected to not only RTN variability but also flicker noise variability in the bulk MOSFET compared with SOTB MOSFET because of local carrier number fluctuation in the channel. On the other hand, the typical level of LFN in SOTB MOSFET is slightly larger than that in the bulk MOSFET because of an additional interface on the buried oxide layer. However, considering the tailing characteristics of LFN variability, LFN in SOTB MOSFET can be assumed to be smaller than that in the bulk MOSFET, which enables the low-voltage operation of analog circuits. (C) 2018 The Japan Society of Applied Physics.

机译：研究了带有薄盒硅（SOTB）技术的整体和完全耗尽的绝缘体上硅（FDSOI）金属氧化物半导体场效应晶体管（MOSFET）的低频噪声（LFN）变异性。 LFN通常通过随机电报噪声（RTN）来显示闪烁噪声分量和信号洛伦兹分量。与SOTB MOSFET相比，在弱反转状态下，与SOTB MOSFET相比，沟道中的随机掺杂物波动（RDF）不仅会严重影响RTN可变性，而且还会影响大体积MOSFET的闪烁噪声可变性，这是由于沟道中的局部载流子数量波动所致。另一方面，由于在掩埋氧化物层上有额外的界面，因此SOTB MOSFET中LFN的典型水平比体MOSFET中的LFN略高。但是，考虑到LFN可变性的拖尾特性，可以假定SOTB MOSFET中的LFN小于体MOSFET中的LFN，这使得模拟电路能够进行低压工作。（C）2018年日本应用物理学会。

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《Japanese journal of applied physics》 |2018年第4s期|04FD19.1-04FD19.6|共6页
作者
Maekawa Keiichi; Makiyama Hideki; Yamamoto Yoshiki; Hasegawa Takumi; Okanishi Shinobu; Sonoda Kenichiro; Shinkawata Hiroki; Yamashita Tomohiro; Kamohara Shiro; Yamaguchi Yasuo;
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Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

Renesas Elect Corp, Hitachinaka, Ibaraki 3128504, Japan;

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机译：热载流子对绝缘体上部分耗尽的硅上金属氧化物半导体场效应晶体管中低频噪声的降解
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3. Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Japanese journal of applied physics . 2011,第4ISSUE2期

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4. Analysis of low-frequency noise in organic field-effect transistors combining static and noise data [C] . Xu Y., Balestra F., Chroboczek J.A., 2011 21st International Conference on Noise and Fluctuations . 2011

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Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

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